ZVP3310A Diodes Inc, ZVP3310A Datasheet - Page 3

• Manufacturer Part Number: ZVP3310A
• Description: MOSFET Small Signal P-Chnl 100V
• Manufacturer: Diodes Inc

Specifications of ZVP3310A

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 20 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.14 A
• Power Dissipation: 625 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: E-Line
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
100
90
90
80
80
70
70
60
60
40
40
40
50
50
30
30
20
20
10
10
50
30
20
10
0
0
0
Capacitance v drain-source voltage
Transconductance v drain current
0
0
0
-0.1
-0.1
-10
V
I
D
DS
- Drain Current (Amps)
-0.2
-0.2
-20
-Drain Source Voltage (Volts)
-0.3 -0.4
-0.3 -0.4
-30
TYPICAL CHARACTERISTICS
-40
-0.5
-0.5
-50
V
V
V
f
DS=
DS=
=1MHz
GS=
-10V
-10V
0V
-0.6
-0.6
-60
-0.7
-0.7
-70
C
C
C
iss
oss
rss
-0.8
-0.8
-80
Transconductance v gate-source voltage
-10
-12
-14
-16
-2
-4
-6
-8
100
0
80
90
70
60
50
40
30
20
10
Gate charge v gate-source voltage
0
0
0.1 0.2 0.3 0.4 0.5 0.6
0 -1
V
DS
-25V
V
=
-2
GS
-Gate Source Voltage (Volts)
-50V
-3
Q-Charge (nC)
-4
-100V
V
DS=
-5
0.7 0.8 0.9 1.0 1.1 1.2
-10V
-6
-7
I
D=-
-8
0.2A
-9
-10