SI7948DP-T1-E3 Vishay, SI7948DP-T1-E3 Datasheet - Page 2
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SI7948DP-T1-E3
Manufacturer Part Number
SI7948DP-T1-E3
Description
MOSFET Small Signal 60V 4.6A 0.075Ohm
Manufacturer
Vishay
Datasheet
1.SI7948DP-T1-GE3.pdf
(6 pages)
Specifications of SI7948DP-T1-E3
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.075 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3 A
Power Dissipation
1400 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PowerPAK SO
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI7948DP-T1-E3
Manufacturer:
FUJITSU
Quantity:
778
Si7948DP
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
b
15
12
9
6
3
0
0
1
V
a
a
DS
Output Characteristics
a
- Drain-to-Source Voltage (V)
J
V
= 25 °C, unless otherwise noted
GS
2
= 10 V thru 4 V
a
Symbol
R
V
3
I
t
t
I
I
D(on)
DS(on)
V
GS(th)
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
R
t
t
t
SD
rr
fs
gs
gd
r
f
g
g
4
I
V
V
D
3 V
New Product
DS
DS
≅ 15 A, V
I
F
V
= 60 V, V
= 30 V, V
V
5
V
V
= 2.7 A, dI/dt = 100 A/µs
V
V
V
DS
V
I
DS
GS
S
DS
DS
GS
DS
DD
Test Conditions
= 2.7 A, V
= 0 V, V
= V
= 4.5 V, I
= 60 V, V
≥ 5 V, V
= 10 V, I
= 15 V, I
= 30 V, R
GEN
GS
GS
GS
, I
= 10 V, R
= 0 V, T
= 10 V, I
GS
D
GS
D
D
GS
D
= 250 µA
GS
L
= ± 20 V
= 4.6 A
= 4.6 A
= 4.0 A
= 10 V
= 0 V
= 2 Ω
= 0 V
J
D
g
= 55 °C
= 2.5 Ω
= 15 A
15
12
9
6
3
0
0.0
0.5
V
1.0
GS
Min.
Transfer Characteristics
15
1
- Gate-to-Source Voltage (V)
1.5
25 °C
2.0
T
0.060
0.080
C
Typ.
S09-0268-Rev. C, 16-Feb-09
0.8
3.5
1.5
12
15
30
= 125 °C
6
2
7
8
7
Document Number: 72403
2.5
3.0
± 100
0.075
0.100
Max.
1.2
20
20
25
40
20
60
3
1
5
- 55 °C
3.5
4.0
Unit
nA
µA
nC
ns
Ω
Ω
V
A
S
V
4.5