ZVN2110A Diodes Inc, ZVN2110A Datasheet
ZVN2110A
Manufacturer Part Number
ZVN2110A
Description
MOSFET Small Signal N-Chnl 100V
Manufacturer
Diodes Inc
Datasheet
1.ZVN2110A.pdf
(3 pages)
Specifications of ZVN2110A
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.32 A
Power Dissipation
700 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
E-Line
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ZVN2110A
Manufacturer:
ZETEX
Quantity:
530
Company:
Part Number:
ZVN2110ASTZ
Manufacturer:
ZETEX
Quantity:
2 000
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
*
*
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2%
(2) Sample test
(3) Switching times measured with 50
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
100 Volt V
R
DS(on)
= 4
DS
amb
=25°C
amb
SYMBOL MIN.
BV
V
I
I
I
R
g
C
C
C
t
t
t
t
GSS
DSS
D(on)
d(on)
r
d(off)
f
fs
GS(th)
DS(on)
iss
oss
rss
=25°C
DSS
source impedance and <5ns rise time on a pulse generator
100
0.8
1.5
250
amb
SYMBOL
V
I
I
V
P
T
D
DM
tot
j
DS
GS
:T
= 25°C unless otherwise stated).
MAX.
2.4
20
100
4
75
25
8
7
8
13
13
stg
1
UNIT CONDITIONS.
V
V
nA
A
mS
pF
pF
pF
ns
ns
ns
ns
A
A
I
ID=1mA, V
V
V
V
V
V
V
V
V
D
GS
DS
DS
DS
GS
DS
DS
DD
=1mA, V
-55 to +150
=100V, V
=80V, V
=25V, V
=25V,I
=25 V, V
= 20V, V
=10V,I
VALUE
25V, I
100
320
700
ZVN2110A
6
20
TO92 Compatible
D
D
GS
DS
=1A
D
=1A
GS
GS
D
GS
=1A
=0V
GS
G
= V
DS
=0V, T=125°C
=10V
S
=0V, f=1MHz
E-Line
=0
=0V
GS
UNIT
mW
mA
°C
A
V
V
(2)
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ZVN2110A Summary of contents
Page 1
... I 1 DSS 100 I 1.5 D(on DS(on) g 250 iss C 25 oss C 8 rss t 7 d(on d(off source impedance and <5ns rise time on a pulse generator ZVN2110A E-Line TO92 Compatible VALUE 100 320 6 20 700 -55 to +150 UNIT CONDITIONS =1mA ID=1mA 20V =100V ...
Page 2
... I D= 0.8 1A 0.4 500mA 100mA 2.4 2.2 2.0 1.8 1.6 = 1.4 1.2 1.0 0.8 0.6 100 Normalised R 3-365 ZVN2110A Drain Source Voltage (Volts) DS Saturation Characteristics Gate Source Voltage (Volts) GS- Transfer Characteristics -40 - 120 100 140 160 T -Junction Temperature (°C) j and V v Temperature ...
Page 3
... ZVN2110A TYPICAL CHARACTERISTICS 500 400 300 V 25V DS= 200 100 0 0 0.2 0.4 0 Drain Current (Amps) D(on) Transconductance v drain current 100 -Drain Source Voltage (Volts) DS Capacitance v drain-source voltage 500 400 300 200 100 0 0.8 1.0 0 Transconductance v gate-source voltage iss oss C rss 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 ...