ZXMP6A13FTA Diodes Inc, ZXMP6A13FTA Datasheet - Page 2

• Manufacturer Part Number: ZXMP6A13FTA
• Description: MOSFET Small Signal 60V P-Chnl UMOS
• Manufacturer: Diodes Inc

Specifications of ZXMP6A13FTA

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.4 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.1 A
• Power Dissipation: 806 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal Characteristics
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 3)
Continuous Source Current (Body Diode) (Note 2)
Pulsed Source Current (Body Diode) (Note 3)
Power Dissipation (Note 1)
Linear Derating Factor
Power Dissipation (Note 2)
Linear Derating Factor
Thermal Resistance, Junction to Ambient (Note 1)
Thermal Resistance, Junction to Ambient (Note 2)
Operating and Storage Temperature Range
Notes:
ZXMP6A13F
Document Number DS32014 Rev. 4 - 2
1. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
2. For a device surface mounted on FR4 PCB measured at t ≤5 secs.
3. Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10μs - pulse current limited by maximum junction temperature.
Characteristic
Characteristic
@T
V
A
GS
= 25°C unless otherwise specified
= 10V
@T
A
= 25°C unless otherwise specified
T
A
= 70°C (Note 2)
(Note 2)
(Note 1)
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Symbol
Symbol
T
J,
V
R
R
V
I
I
P
P
DSS
I
DM
I
SM
T
θJA
θJA
GS
D
S
D
D
STG
Diodes Incorporated
A Product Line of
-55 to +150
Value
Value
±20
-1.1
-0.8
-0.9
-4.0
-1.2
-4.0
625
806
200
155
-60
6.5
5
ZXMP6A13F
mW/°C
mW/°C
© Diodes Incorporated
Units
°C/W
°C/W
November 2009
Unit
mW
mW
°C
V
V
A
A
A
A