ZXMN3A14FTA Diodes Inc, ZXMN3A14FTA Datasheet - Page 2

• Manufacturer Part Number: ZXMN3A14FTA
• Description: MOSFET Small Signal N Channel
• Manufacturer: Diodes Inc

Specifications of ZXMN3A14FTA

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.065 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.9 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature.
ZXMN3A14F
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ V
Pulsed Drain Current
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient
Junction to Ambient
S E M I C O N D U C T O R S
(c)
(a)
(b)
A
A
=25°C
=25°C
@ V
@ V
(a)
(b)
GS
GS
GS
= 10V; T
= 10V; T
= 10V; T
(c)
A
A
A
(b)
=25°C
=70°C
=25°C
5 sec.
(b)
(b)
(a)
2
SYMBOL
V
V
I
I
I
I
P
P
T
SYMBOL
R
R
D
DM
S
SM
D
D
j
DSS
GS
, T
JA
JA
stg
-55 to +150
VALUE
LIMIT
125
83
3.9
3.2
3.2
2.3
1.5
30
18
18
12
1
8
20
ISSUE 1 - OCTOBER 2005
mW/°C
mW/°C
UNIT
°C/W
°C/W
UNIT
W
W
°C
A
A
A
A
A
A
V
V