ZVN2106A Diodes Inc, ZVN2106A Datasheet
ZVN2106A
Manufacturer Part Number
ZVN2106A
Description
MOSFET Small Signal N-Chnl 60V
Manufacturer
Diodes Inc
Datasheet
1.ZVN2106A.pdf
(3 pages)
Specifications of ZVN2106A
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.45 A
Power Dissipation
700 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
E-Line
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ZVN2106A
Manufacturer:
ZETEX
Quantity:
689
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
*
*
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
PARAMETER
Drain-Source Voltage
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Body Leakage
On-State Drain Current(1)
Continuous Drain Current at T
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
Operating and Storage Temperature Range
Gate-Source Threshold
Voltage
Zero Gate Voltage Drain
Current
Static Drain-Source On-State
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance
(2)
60 Volt V
R
DS(on)
=2
DS
amb
=25°C
amb
SYMBOL MIN.
BV
V
I
I
I
R
g
C
C
C
GSS
DSS
D(on)
=25°C
fs
GS(th)
DS(on)
iss
oss
rss
DSS
60
0.8
2
300
3-361
amb
SYMBOL
V
I
I
V
P
T
D
DM
tot
j
DS
GS
:T
= 25°C unless otherwise stated).
MAX. UNIT CONDITIONS.
2.4
20
500
100
2
75
45
20
stg
V
V
nA
nA
A
mS
pF
pF
pF
A
I
ID=1mA, V
V
V
V
T=125°C
V
V
V
V
D
GS
DS
DS
DS
GS
DS
DS
=1mA, V
-55 to +150
=60 V, V
=48 V, V
=18V, V
=18V,I
=18 V, V
= 20V, V
=10V,I
VALUE
450
700
60
ZVN2106A
8
20
(2)
TO92 Compatible
D
D
GS
DS
=1A
=1A
GS
D
GS
GS
GS
=0V
G
= V
DS
=10V
S
=0
=0V,
=0V, f=1MHz
E-Line
=0V
GS
UNIT
mW
mA
°C
A
V
V
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ZVN2106A Summary of contents
Page 1
... SYMBOL MIN. MAX. UNIT CONDITIONS DSS V 0.8 2.4 V GS(th GSS I 500 nA DSS 100 D(on DS(on) g 300 iss oss rss 3-361 ZVN2106A E-Line TO92 Compatible VALUE UNIT 60 450 700 mW -55 to +150 °C I =1mA ID=1mA 20V =0V T=125°C (2) V =18V, V ...
Page 2
... ZVN2106A TYPICAL CHARACTERISTICS Drain Source Voltage (Volts) DS Saturation Characteristics Gate Source Voltage (Volts) V GS- Transfer Characteristics 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -80 -60 -40 - -Junction Temperature (C°) j Normalised R and V DS(on) GS(th) 2.0 V GS= 1.8 10V 9V 1.6 1 ...
Page 3
... V 10V DS= 0.3 0.2 0 -Gate Source Voltage (Volts) GS Transconductance v gate-source voltage 0.5 1.0 1.5 0 Q-Charge (nC) Gate charge v gate-source voltage 100 Capacitance v drain-source voltage = DD 30V 50V 20V 2.0 2.5 3.0 3-363 ZVN2106A -Drain Source Voltage (Volts iss C oss C rss 50 ...