ZVN4306AV Diodes Inc, ZVN4306AV Datasheet - Page 3

• Manufacturer Part Number: ZVN4306AV
• Description: MOSFET Small Signal Avalanche
• Manufacturer: Diodes Inc

Specifications of ZVN4306AV

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.33 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.1 A
• Power Dissipation: 1130 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: E-Line
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Normalised R
400
500
300
200
100
12
11
10
9
8
7
6
5
4
3
2
1
0
0
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
Capacitance v drain-source voltage
0
0
1
-50 -25
V
10
Saturation Characteristics
DS
V
2
- Drain Source Voltage (Volts)
DS
V
20V 12V
GS=
20
Gate Threshold Voltage V
DS(on)
-Drain Source Voltage (Volts)
T
0 25 50 75 100
3
j
-Junction Temperature (°C)
4
30
10V
and V
TYPICAL CHARACTERISTICS
5
40
9V
6
8V
GS(th)
50
125
7
v Temperature
GS(TH)
60
150
8
C
C
C
iss
oss
rss
175 200
V
I
V
I
D=
D=
9
GS=
70
GS=
3A
1mA
10V
V
10
DS
7V
6V
5V
3.5V
225
4V
3V
80
1.0
0.1
10
0.1
14
12
10
16
5
4
3
2
1
8
6
4
2
0
0
Gate charge v gate-source voltage
On-resistance v drain current
Transconductance v drain current
0
0
V
GS
1
2
=3V
I
D-
I
2
D(on)
Drain Current (Amps)
I
D=
4
3A
3
3.5V
1
- Drain Current (Amps)
6
4
Q-Charge (nC)
8
V
5
DS=
5V
ZVN4306AV
10
6
10V
6V
7
10
12
8V
8
V
40V
60V
20V
14
DD
9
10V
=
16
10 11 12
18
100
20