ZVN4306AV Diodes Inc, ZVN4306AV Datasheet - Page 3
![MOSFET Small Signal Avalanche](/photos/16/6/160692/to92_sml.jpg)
ZVN4306AV
Manufacturer Part Number
ZVN4306AV
Description
MOSFET Small Signal Avalanche
Manufacturer
Diodes Inc
Datasheet
1.ZVN4306AV.pdf
(4 pages)
Specifications of ZVN4306AV
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.33 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.1 A
Power Dissipation
1130 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
E-Line
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Normalised R
400
500
300
200
100
12
11
10
9
8
7
6
5
4
3
2
1
0
0
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
Capacitance v drain-source voltage
0
0
1
-50 -25
V
10
Saturation Characteristics
DS
V
2
- Drain Source Voltage (Volts)
DS
V
20V 12V
GS=
20
Gate Threshold Voltage V
DS(on)
-Drain Source Voltage (Volts)
T
0 25 50 75 100
3
j
-Junction Temperature (°C)
4
30
10V
and V
TYPICAL CHARACTERISTICS
5
40
9V
6
8V
GS(th)
50
125
7
v Temperature
GS(TH)
60
150
8
C
C
C
iss
oss
rss
175 200
V
I
V
I
D=
D=
9
GS=
70
GS=
3A
1mA
10V
V
10
DS
7V
6V
5V
3.5V
225
4V
3V
80
1.0
0.1
10
0.1
14
12
10
16
5
4
3
2
1
8
6
4
2
0
0
Gate charge v gate-source voltage
On-resistance v drain current
Transconductance v drain current
0
0
V
GS
1
2
=3V
I
D-
I
2
D(on)
Drain Current (Amps)
I
D=
4
3A
3
3.5V
1
- Drain Current (Amps)
6
4
Q-Charge (nC)
8
V
5
DS=
5V
ZVN4306AV
10
6
10V
6V
7
10
12
8V
8
V
40V
60V
20V
14
DD
9
10V
=
16
10 11 12
18
100
20