ZVP4525E6TA Diodes Inc, ZVP4525E6TA Datasheet - Page 2

• Manufacturer Part Number: ZVP4525E6TA
• Description: MOSFET Small Signal P-Chnl 250V
• Manufacturer: Diodes Inc

Specifications of ZVP4525E6TA

• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 14 Ohm @ 10 V
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 40 V
• Continuous Drain Current: 0.197 A
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS.
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
NB High Voltage Applications
For high voltage applications, the appropriate industry sector guidelines should be considered with regard to
voltage spacing between conductors.
ZVP4525E6
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current (V
Pulsed Drain Current (c)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at T
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
A
=25°C (a)
(V
GS
GS
=10V; TA=25°C)(a)
=10V; TA=70°C)(a)
2
SYMBOL
R
R
SYMBOL
V
V
I
I
I
I
I
P
T
D
D
DM
S
SM
JA
JA
D
j
DSS
GS
:
T
stg
-55 to +150
VALUE
LIMIT
113
-0.75
-250
-197
-157
68
1.1
8.8
-1
-1
40
ISSUE 1 - MARCH 2001
mW/°C
UNIT
°C/W
°C/W
UNIT
mA
mA
W
°C
A
A
A
V
V