BSS123TA Diodes Inc, BSS123TA Datasheet
BSS123TA
Manufacturer Part Number
BSS123TA
Description
MOSFET Small Signal N-Chnl 100V
Manufacturer
Diodes Inc
Datasheet
1.BSS123TA.pdf
(1 pages)
Specifications of BSS123TA
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
6 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.17 A
Power Dissipation
360 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSS123TA
Manufacturer:
Diodes/Zetex
Quantity:
132 580
Part Number:
BSS123TA
Manufacturer:
DIODES/美台
Quantity:
20 000
SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – JANUARY 1996
PARTMARKING DETAIL
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% (2) Sample test.
(3) Switching times measured with 50
For typical characteristics graphs see ZVN3310F datasheet.
PARAMETER
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current at T
Pulsed Drain Current
Gate-Source Voltage
Peak Gate-Source Voltage
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage
Drain Current
Static Drain-Source
On-State Resistance (1)
Forward
Transconductance(1)(2)
Input Capacitance (2)
Common Source
Output Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
amb
=25°C
SYMBOL MIN.
BV
V
I
I
R
g
C
C
C
t
t
t
t
GSS
DSS
d(on)
r
d(off)
f
amb
fs
GS(th)
DS(on)
iss
oss
rss
– SA
DSS
=25°C
source impedance and <5ns rise time on a pulse generator
100
0.8
80
3 - 70
amb
MIN.
2.2
10
1
2
5
120
10
10
15
25
SYMBOL
V
V
I
I
V
V
P
T
D
DM
tot
j
= 25°C unless otherwise stated).
DS
DGR
GS
GSM
:T
stg
MAX. UNIT CONDITIONS.
2.8
50
15
60
10
6
20
9
4
V
V
nA
nA
mS
pF
pF
pF
ns
ns
ns
ns
A
A
I
I
V
V
V
V
V
V
V
V
D
D
-55 to +150
GS
DS
DS
DS
GS
DS
DS
DD
=0.25mA, V
=1mA, V
VALUE
=100V, V
=100V, V
=20V, V
=25V, I
=25V, V
= 20V, V
=10V, I
100
100
170
680
360
30V, I
20
20
D
BSS123
D
DS
D
GS
GS
D
=100mA
=100mA
GS
GS
=280mA
= V
DS
=0V
=0V, f=1MHz
GS
SOT23
=0V
=0V, T=125°C
=0V
=0V
GS
UNIT
mW
mA
mA
°C
V
V
V
V
G
S
(2)
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