SI4860DY-T1-E3 Vishay, SI4860DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4860DY-T1-E3
• Description: MOSFET Small Signal 30V 16A 1.6W
• Manufacturer: Vishay

Specifications of SI4860DY-T1-E3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.008 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Continuous Drain Current Id: 16A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 8mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71752
S0-0221-Rev. D, 09-Feb-09
0.015
0.012
0.009
0.006
0.003
0.000
60
10
6
5
4
3
2
1
0
1
0
0
0
Source-Drain Diode Forward Voltage
V
I
D
DS
On-Resistance vs. Drain Current
0.2
= 16 A
10
= 15 V
4
V
SD
Q
T
g
J
- Source-to-Drain Voltage (V)
0.4
- Total Gate Charge (nC)
= 150 °C
I
V
D
GS
Gate Charge
- Drain Current (A)
20
8
= 4.5 V
0.6
12
30
0.8
T
J
V
= 25 °C
GS
40
16
= 10 V
1.0
1.2
20
50
0.040
0.032
0.024
0.016
0.008
0.000
2500
2000
1500
1000
2.00
1.75
1.50
1.25
1.00
0.75
0.50
500
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
- 25
V
I
D
rss
GS
= 16 A
= 10 V
6
2
V
V
DS
GS
0
T
C
J
oss
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
Capacitance
25
12
4
C
50
Vishay Siliconix
iss
18
6
75
Si4860DY
I
D
= 16 A
www.vishay.com
100
24
8
125
150
10
30
3