IXTP60N20T IXYS, IXTP60N20T Datasheet

MOSFET Power Trench POWER MOSFETs 200v, 60A

IXTP60N20T

Manufacturer Part Number
IXTP60N20T
Description
MOSFET Power Trench POWER MOSFETs 200v, 60A
Manufacturer
IXYS
Datasheet

Specifications of IXTP60N20T

Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
32 mOhms
Forward Transconductance Gfs (max / Min)
62 S / 40 S
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
60 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220 AB
Vdss, Max, (v)
200
Id(cont), Tc=25°c, (a)
60
Rds(on), Max, Tj=25°c, (?)
0.04
Ciss, Typ, (pf)
4530
Qg, Typ, (nc)
73
Trr, Typ, (ns)
118
Trr, Max, (ns)
-
Pd, (w)
500
Rthjc, Max, (k/w)
0.3
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTP60N20T
Manufacturer:
C&K
Quantity:
12 000
Trench
Power MOSFET
N-Channel Enhancement Mode
For PDP Drivers
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2010 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
sold
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C Unless Otherwise Specified)
TM
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 Seconds
Mounting Torque (TO-220 &TO-3P)
TO-263
TO-220
TO-3P
V
V
V
V
V
Test Conditions
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
= 25°C
= 0V, I
= V
= ± 20V, V
= V
= 10V, I
GS
DSS
, I
D
, V
D
D
= 250μA
= 250μA
= 0.5 • I
GS
DS
= 0V
= 0V
D25
GS
, Note 1
= 1MΩ
T
J
= 150°C
JM
IXTA60N20T
IXTQ60N20T
IXTP60N20T
-55 ... +175
-55 ... +175
Characteristic Values
200
3.0
Min.
Maximum Ratings
1.13 / 10
200
200
±20
±30
150
700
500
175
300
260
2.5
3.0
5.5
Typ.
60
30
32
±200 nA
Nm/lb.in.
Max.
250 μA
5.0
40 mΩ
1 μA
mJ
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
g
g
V
I
R
TO-263 AA (IXTA)
TO-220AB (IXTP)
TO-3P (IXTQ)
G = Gate
S = Source
Features
Advantages
Applications
D25
High Current Handling Capability
175°C Operating Temperature
Avalanche Rated
Fast Intrinsic Rectifier
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
Low R
Easy to Mount
Space Savings
High Power Density
DS(on)
DSS
G
D
DS(on)
G
S
D S
= 200V
= 60A
≤ ≤ ≤ ≤ ≤
G
D
Tab = Drain
40mΩ Ω Ω Ω Ω
S
D (Tab)
D (Tab)
D (Tab)
= Drain
DS99359B(7/10)

Related parts for IXTP60N20T

IXTP60N20T Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2010 IXYS CORPORATION, All Rights Reserved IXTA60N20T IXTP60N20T IXTQ60N20T Maximum Ratings 200 = 1MΩ 200 GS ±20 ±30 60 150 JM 30 700 500 -55 ... +175 175 -55 ... +175 300 260 1. 2.5 3.0 5.5 Characteristic Values Min. ...

Page 2

... L3 1.27 1.78 .050 .070 L4 0 0.13 0 .005 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTA60N20T IXTP60N20T IXTQ60N20T TO-220 (IXTP) Outline Max Pins Gate 3 - Source nC nC 0.30 °C/W °C/W °C/W Max 240 A 1.3 ...

Page 3

... J = 15V GS 10V 3.0 3.5 4.0 4.5 5.0 = 30A Value vs 175º 25ºC J 120 140 160 180 200 IXTA60N20T IXTP60N20T Fig. 2. Extended Output Characteristics @ 15V GS 10V Volts DS Fig Normalized to I DS(on) Junction Temperature 3 10V GS 3.0 2.6 2 ...

Page 4

... T = 25º 0.8 0.9 1.0 1.1 1.2 1.00 C iss 0.10 C oss C rss 0.01 0.00001 IXTA60N20T IXTP60N20T Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge V = 100V 30A 10mA NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0.0001 0.001 0.01 Pulse Width - Second IXTQ60N20T 40º ...

Related keywords