2SK2611(F,T) Toshiba
2SK2611(F,T)
Manufacturer Part Number
2SK2611(F,T)
Description
MOSFET Power MOSFET N-Ch 900V 9A Rdson 1.4 Ohm
Manufacturer
Toshiba
Specifications of 2SK2611(F,T)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.4 Ohm @ 10 V
Drain-source Breakdown Voltage
900 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
9 A
Power Dissipation
150000 mW
Mounting Style
Through Hole
Package / Case
TO-3PN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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