IRF9Z34SPBF Vishay, IRF9Z34SPBF Datasheet

MOSFET Power P-Chan 60V 18 Amp

IRF9Z34SPBF

Manufacturer Part Number
IRF9Z34SPBF
Description
MOSFET Power P-Chan 60V 18 Amp
Manufacturer
Vishay
Type
Power MOSFETr
Datasheets

Specifications of IRF9Z34SPBF

Transistor Polarity
P-Channel
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.14 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
18 A
Power Dissipation
3700 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
D2PAK
Continuous Drain Current Id
-18A
Drain Source Voltage Vds
-60V
On Resistance Rds(on)
140mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.14Ohm
Drain-source On-volt
60V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
D2PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF9Z34SPBF
Manufacturer:
IR
Quantity:
20 000
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. Uses IRF9Z34, SiHF9Z34 data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91093
S11-1052-Rev. C, 30-May-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
I
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Repetiitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
2
DS
PAK
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(V)
(nC)
 - 18 A, dI/dt  170 A/μs, V
= - 25 V, starting T
(TO-262)
()
G
D
S
a
G
a, e
D
2
D
J
PAK (TO-263)
= 25 °C, L = 1.3 mH, R
S
c, e
a
b, e
V
DD
GS
 V
= - 10 V
D
SiHF9Z34S-GE3
IRF9Z34SPbF
SiHF9Z34S-E3
DS
2
PAK (TO-263)
, T
G
Single
J
- 60
9.9
IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L
34
16
 175 °C.
P-Channel MOSFET
This document is subject to change without notice.
g
C
= 25 , I
= 25 °C, unless otherwise noted)
Power MOSFET
V
S
D
0.14
GS
at - 10 V
AS
T
T
= - 18 A (see fig. 12).
C
A
for 10 s
D
SiHF9Z34STRL-GE3
IRF9Z34STRLPbF
SiHF9Z34STL-E3
= 25 °C
= 25 °C
2
PAK (TO-263)
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Advanced Process Technology
• Surface Mount (IRF9Z34S, SiHF9Z34S)
• Low-Profile Through-Hole (IRF9Z34L, SiHF9Z34L)
• 175 °C Operating Temperature
• Fast Switching
• P-Channel
• Fully Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D
accommodating die sizes up to HEX-4. It provides the
highest
on-resistance in any existing surface mount package. The
D
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application.
The through-hole version (IRF9Z34L, SiHF9Z34L) is
available for low-profile applications.
2
Definition
PAK is suitable for high current applications because of
2
PAK is a surface mount power package capable of
a
a
power
a
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
DM
I
AR
DS
GS
AR
D
AS
D
SiHF9Z34STRR-GE3
IRF9Z34STRRPbF
SiHF9Z34STR-E3
D
stg
2
PAK (TO-263)
capability
- 55 to + 175
and
a
LIMIT
a
300
± 20
0.59
- 4.5
- 60
- 18
- 13
- 72
- 18
370
8.8
3.7
88
a
www.vishay.com/doc?91000
d
Vishay Siliconix
the
I
-
IRF9Z34LPbF
SiHF9Z34L-E3
2
PAK (TO-262)
lowest
www.vishay.com
UNIT
W/°C
V/ns
possible
mJ
mJ
°C
W
V
A
A
1

Related parts for IRF9Z34SPBF

IRF9Z34SPBF Summary of contents

Page 1

... ORDERING INFORMATION 2 Package D PAK (TO-263) Lead (Pb)-free and Halogen-free SiHF9Z34S-GE3 IRF9Z34SPbF Lead (Pb)-free SiHF9Z34S-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a, e Pulsed Drain Current Linear Derating Factor b, e Single Pulse Avalanche Energy ...

Page 2

... IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient (PCB a Mounted, steady-state) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... Pulse Width ° 91093_03 2.5 2.0 1.5 - 4.5 V 1.0 0.5 20 µs Pulse Width T = 175 ° 91093_04 Fig Normalized On-Resistance vs. Temperature This document is subject to change without notice. Vishay Siliconix ° ° 175 µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics ...

Page 4

... IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix 2000 MHz iss rss gd 1600 oss ds 1200 800 400 Drain-to-Source Voltage ( 91093_05 Fig Typical Capacitance vs. Drain-to-Source Voltage Total Gate Charge (nC) 91093_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

Page 5

... Fig. 10a - Switching Time Test Circuit 125 150 175 Fig. 10b - Switching Time Waveforms Single Pulse (Thermal Response Rectangular Pulse Duration ( Fig. 12b - Unclamped Inductive Waveforms This document is subject to change without notice. Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0 d(on) r d(off ...

Page 6

... IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix 91093_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Maximum Avalanche Energy vs. Drain Current www.vishay.com 6 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 1200 Top - 7.3 A 1000 - 13 A Bottom ...

Page 7

... Note a. V Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data see www.vishay.com/ppg?91093. ...

Page 8

... E 0.020 0.039 E1 0.020 0.035 0.045 0.070 H 0.045 0.068 0.015 0.029 L1 0.015 0.023 L2 0.045 0.065 L3 0.330 0.380 L4 Package Information Vishay Siliconix H Gauge plane 0° to 8° B Seating plane Detail “A” Rotated 90° CW scale 8 View MILLIMETERS MIN. MAX. MIN. 6.86 - ...

Page 9

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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