ZXMN15A27KTC Diodes Inc, ZXMN15A27KTC Datasheet - Page 4

• Manufacturer Part Number: ZXMN15A27KTC
• Description: MOSFET Power ENHANCE MODE MOSFET 150V N-CHANNEL
• Manufacturer: Diodes Inc

Specifications of ZXMN15A27KTC

• Gate Charge Qg: 6.6 nC
• Minimum Operating Temperature: - 55 C
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 650 mOhms
• Forward Transconductance Gfs (max / Min): 2.8 S
• Drain-source Breakdown Voltage: 150 V
• Continuous Drain Current: 2.6 A
• Power Dissipation: 4.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 8)
Forward Transconductance (Notes 8 & 9)
Diode Forward Voltage (Note 8)
Reverse recovery time (Note 9)
Reverse recovery charge (Note 9)
DYNAMIC CHARACTERISTICS (
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time (Note 10)
Turn-On Rise Time (Note 10)
Turn-Off Delay Time (Note 10)
Turn-Off Fall Time (Note 10)
Notes:
ZXMN15A27K
Document Number DS31978 Rev. 2 - 2
10. Switching characteristics are independent of operating junction temperatures.
8. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
9. For design aid only, not subject to production testing.
Characteristic
Note 9
@T
)
A
= 25°C unless otherwise specified
Symbol
R
BV
V
DS (ON)
t
t
I
I
C
V
C
C
Q
Q
D(on)
D(off)
GS(th)
DSS
GSS
Q
Q
g
t
oss
t
t
SD
rss
DSS
rr
iss
fs
gs
gd
r
f
rr
g
www.diodes.com
Min
150
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2
0.500
0.880
64.5
23.3
12.7
17.1
13.3
Typ
153
169
2.7
2.8
1.1
6.6
1.0
3.4
3.3
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⎯
⎯
0.650
0.950
±100
Max
500
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4
Diodes Incorporated
A Product Line of
Unit
nA
nA
μC
nC
nC
nC
ns
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
S
V
I
V
V
I
V
V
I
I
di/dt = 100A/μs
V
f = 1MHz
V
I
V
I
D
D
S
S
D
D
DS
GS
GS
DS
DS
DS
DD
= 250μA, V
= 4.3A, V
= 5.4A, V
= 5.4A
= 250μA, V
= 5.4A, R
= 150V, V
= 40V, I
= 25V, V
= 120V, V
= ±25V, V
= 10V, I
= 75V, V
Test Condition
ZXMN15A27K
GS
GS
G
D
D
GS
GS
GS
DS
≅ 25Ω
= 2.15A
GS
= 2.15A
GS
DS
= 0V
= 0V,
= 0V
= 10V
= 0V
= V
= 0V
= 0V
= 10V
© Diodes Incorporated
GS
October 2009