SIHB12N50C-E3 Vishay, SIHB12N50C-E3 Datasheet - Page 6
![MOSFET Power N-Channel 500V](/photos/16/4/160475/to263ab_sml.jpg)
SIHB12N50C-E3
Manufacturer Part Number
SIHB12N50C-E3
Description
MOSFET Power N-Channel 500V
Manufacturer
Vishay
Datasheet
1.SIHP12N50C-E3.pdf
(8 pages)
Specifications of SIHB12N50C-E3
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.46 Ohms
Forward Transconductance Gfs (max / Min)
3 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
12 A
Power Dissipation
208 W
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Package / Case
D2PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
SiHP12N50C, SiHB12N50C, SiHF12N50C
Vishay Siliconix
www.vishay.com
6
I
AS
Fig. 13a - Unclamped Inductive Test Circuit
Fig. 13b - Unclamped Inductive Waveforms
R
20 V
G
V
DS
t
p
I
AS
D.U.T.
t
0.01 Ω
p
L
V
15 V
DS
Driver
+
- V
A
DD
A
V
GS
V
G
12 V
Fig. 14a - Basic Gate Charge Waveform
V
Fig. 14b - Gate Charge Test Circuit
GS
Q
Same type as D.U.T.
GS
Current regulator
0.2 µF
Charge
Current sampling resistors
3 mA
Q
50 kΩ
Q
GD
G
0.3 µF
I
G
S10-0969-Rev. B, 26-Apr-10
Document Number: 91388
D.U.T.
I
D
+
-
V
DS