IXFH9N80 IXYS, IXFH9N80 Datasheet
IXFH9N80
Manufacturer Part Number
IXFH9N80
Description
MOSFET Power 9 Amps 800V 0.9 Rds
Manufacturer
IXYS
Datasheet
1.IXFH9N80.pdf
(4 pages)
Specifications of IXFH9N80
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.9 Ohm @ 10 V
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
9 A
Power Dissipation
180000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-247AD
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
9
Rds(on), Max, Tj=25°c, (?)
0.9
Ciss, Typ, (pf)
2600
Qg, Typ, (nc)
85
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
179
Rthjc, Max, (ºc/w)
0.70
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH9N80
Manufacturer:
IXYS
Quantity:
6 000
Company:
Part Number:
IXFH9N80
Manufacturer:
IXYS
Quantity:
15 500
Company:
Part Number:
IXFH9N80Q
Manufacturer:
IXYS
Quantity:
6 000
Company:
Part Number:
IXFH9N80Q
Manufacturer:
IXYS
Quantity:
35 500
HiPerFET
Power MOSFETs
S
C
C
C
C
C
GS
GS
GS
J
J
J
DSS
DS
GS(th)
DS
GS
DM
GS
TM
rr
D
D
DC
D
DSS
G
DS
D25
GS
DD
TM
J
J
J
DSS
JM
V
DS (on)
I
R
TM
t
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IXFH9N80 Summary of contents
Page 1
HiPerFET TM Power MOSFETs DSS GS(th DSS DSS D25 ...
Page 2
D25 DSS DSS D25 D25 ...
Page 3
P BT EÃ DS(on) ' & ...
Page 4
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