SUP75P05-08-E3 Vishay, SUP75P05-08-E3 Datasheet - Page 5

• Manufacturer Part Number: SUP75P05-08-E3
• Description: MOSFET Power 55V 75A 250W
• Manufacturer: Vishay

Specifications of SUP75P05-08-E3

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.008 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 3700 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Continuous Drain Current Id: -75A
• Drain Source Voltage Vds: -55V
• On Resistance Rds(on): 8mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -2V
• Fall Time: 175 ns
• Rise Time: 140 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 70891
S-99404—Rev. B, 29-Nov-99
0.01
90
75
60
45
30
15
0.1
0
2
1
0
10
0.02
–5
0.05
Maximum Avalanche and Drain Current
Duty Cycle = 0.5
0.2
0.1
25
T
vs. Case Temperature
50
C
– Case Temperature ( C)
Single Pulse
75
10
–4
100
Normalized Thermal Transient Impedance, Junction-to-Case
125
150
10
–3
Square Wave Pulse Duration (sec)
175
New Product
10
–2
500
100
10
1
0.1
by r
Limited
DS(on)
V
DS
10
Single Pulse
Safe Operating Area
T
– Drain-to-Source Voltage (V)
–1
SUP/SUB75P05-08
C
1
= 25 C
www.vishay.com FaxBack 408-970-5600
Vishay Siliconix
10
1
10 s
100 s
1 ms
10 ms
100 ms
dc
3
100
2-5