ZVP4525GTA Diodes Inc, ZVP4525GTA Datasheet - Page 2

• Manufacturer Part Number: ZVP4525GTA
• Description: MOSFET Power P-Chnl 250V
• Manufacturer: Diodes Inc

Specifications of ZVP4525GTA

• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 14 Ohm @ 10 V
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 40 V
• Continuous Drain Current: 0.265 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS.
THERMAL RESISTANCE
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
NB High voltage applications
For high voltage applications, the appropriate industry sector guidelines should be considered with regard to
voltage spacing between conductors.
ZVP4525G
PARAMETER
Drain-source voltage
Gate source voltage
Continuous drain current
Pulsed drain current
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T
Linear derating factor
Operating and storage temperature range
PARAMETER
Junction to ambient
Junction to ambient
S E M I C O N D U C T O R S
(c)
(a)
(b)
A
=25°C
(V
(V
GS
GS
(a)
=10V; TA=25°C)
=10V; TA=70°C)
(a)
(a)
SYMBOL
R
R
2
θJA
θJA
SYMBOL
V
V
I
I
I
I
I
P
T
D
D
DM
S
SM
D
j
DSS
GS
:
T
stg
-55 to +150
VALUE
LIMIT
-0.75
-265
-212
63
26
250
±40
16
-1
-1
2
ISSUE 4 - JUNE 2004
mW/°C
UNIT
°C/W
°C/W
UNIT
mA
mA
°C
W
V
V
A
A
A