SUB65P04-15-E3 Vishay, SUB65P04-15-E3 Datasheet - Page 5

• Manufacturer Part Number: SUB65P04-15-E3
• Description: MOSFET Power 40V 65A 120W
• Manufacturer: Vishay

Specifications of SUB65P04-15-E3

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.015 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 65 A
• Power Dissipation: 3750 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 71174
S-00831—Rev. A, 01-May-00
0.01
75
60
45
30
15
0.1
0
2
1
0
10
–4
Maximum Avalanche and Drain Current
Duty Cycle = 0.5
0.2
0.1
25
Single Pulse
0.02
T
vs. Case Temperature
50
C
0.05
– Case Temperature ( C)
75
10
100
–3
Normalized Thermal Transient Impedance, Junction-to-Case
125
150
Square Wave Pulse Duration (sec)
175
10
New Product
–2
1000
10
100
0.1
10
–1
1
0.1
by r
Limited
V
DS
DS(on)
Single Pulse
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
Safe Operating Area
T
– Drain-to-Source Voltage (V)
P
SUP/SUB65P04-15
C
DM
1
JM
= 25 C
www.vishay.com FaxBack 408-970-5600
– T
t
1
A
= P
1
t
Vishay Siliconix
2
DM
Z
thJA
thJA
t
t
1
2
(t)
10
= 62.5 C/W
1 ms
10 ms
100 ms
dc
10 s
100 s
10
100
2-5