IRF9640SPBF Vishay, IRF9640SPBF Datasheet

MOSFET Power P-Chan 200V 11 Amp

IRF9640SPBF

Manufacturer Part Number
IRF9640SPBF
Description
MOSFET Power P-Chan 200V 11 Amp
Manufacturer
Vishay
Type
Power MOSFETr
Datasheets

Specifications of IRF9640SPBF

Transistor Polarity
P-Channel
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.5 Ohm @ 10 V
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11 A
Power Dissipation
3000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
D2PAK
Continuous Drain Current Id
-11A
Drain Source Voltage Vds
-200V
On Resistance Rds(on)
500mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Fall Time
38 ns
Rise Time
43 ns
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.5Ohm
Drain-source On-volt
200V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
D2PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF9640SPBF
Manufacturer:
IR
Quantity:
15 000
Part Number:
IRF9640SPBF
Quantity:
239
Part Number:
IRF9640SPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
IRF9640SPBF
Quantity:
60 000
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91087
S10-1728-Rev. C, 02-Aug-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
I
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Avalanche Current
Repetiitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
2
DS
DS(on)
PAK
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(V)
(nC)
 - 11 A, dI/dt  150 A/μs, V
= - 50 V, starting T
(TO-262)
()
G
D
S
a
G
a
D
D
2
J
PAK (TO-263)
= 25 °C, L = 8.7 mH, R
S
c
a
b
V
DD
GS
 V
= - 10 V
e
D
SiHF9640S-GE3
IRF9640SPbF
SiHF9640S-E3
IRF9640S
SiHF9640S
DS
2
PAK (TO-263)
, T
e
G
Single
- 200
J
7.1
44
27
 150 °C.
P-Channel MOSFET
IRF9640S, SiHF9640S, IRF9640L, SiHF9640L
g
C
= 25 , I
= 25 °C, unless otherwise noted)
Power MOSFET
V
0.50
S
D
GS
at - 10 V
AS
= - 11 A (see fig. 12).
T
T
for 10 s
C
A
D
-
IRF9640STRLPbF
SiHF9640STL-E3
IRF9640STRL
SiHF9640STL
= 25 °C
= 25 °C
2
PAK (TO-263)
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The D
provides the highest power capability and the lowest
possible on-resistance in any existing surface mount
package. The D
applications because of its low internal connection
resistance and can dissipate up to 2.0 W in a typical surface
mount application. The through-hole version (IRF9640L,
SiHF9640L) is available for low-profile applications.
Definition
a
a
2
PAK (TO-263) is a surface mount power package. It
a
a
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
, T
P
device
DM
I
AR
GS
DS
AS
AR
D
D
-
IRF9640STRRPbF
SiHF9640STR-E3
IRF9640STRR
SiHF9640STR
D
stg
2
2
PAK (TO-263)
PAK (TO-263) is suitable for high current
design,
a
a
- 55 to + 150
a
a
LIMIT
0.025
- 200
300
± 20
- 6.8
- 5.0
- 11
- 44
- 11
700
125
1.0
3.0
13
low
Vishay Siliconix
d
I
SiHF9640L-GE3
IRF9640LPbF
SiHF9640L-E3
-
-
2
on-resistance
PAK (TO-262)
www.vishay.com
UNIT
W/°C
V/ns
mJ
mJ
°C
W
V
A
A
and
1

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IRF9640SPBF Summary of contents

Page 1

... I PAK (TO-262) D PAK (TO-263 ORDERING INFORMATION 2 Package D Lead (Pb)-free and Halogen-free SiHF9640S-GE3 IRF9640SPbF Lead (Pb)-free SiHF9640S-E3 IRF9640S SnPb SiHF9640S Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current Linear Derating Factor e Linear Derating Factor (PCB Mount) ...

Page 2

... IRF9640S, SiHF9640S, IRF9640L, SiHF9640L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... Fig Typical Output Characteristics, T Document Number: 91087 S10-1728-Rev. C, 02-Aug-10 IRF9640S, SiHF9640S, IRF9640L, SiHF9640L - 4 µs Pulse Width ° 91087_03 = 25 ° 4 µs Pulse Width T = 150 ° 91087_04 = 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix ° 150 C ° µs Pulse Width Gate-to-Source Voltage ( Fig ...

Page 4

... IRF9640S, SiHF9640S, IRF9640L, SiHF9640L Vishay Siliconix 2400 MHz iss gs 2000 rss oss ds 1600 1200 800 400 Drain-to-Source Voltage ( 91087_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 100 Total Gate Charge (nC) 91087_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss C rss 1 91087_07 Fig ...

Page 5

... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91087 S10-1728-Rev. C, 02-Aug-10 IRF9640S, SiHF9640S, IRF9640L, SiHF9640L 100 125 150 Single Pulse (Thermal Response Rectangular Pulse Duration ( Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...

Page 6

... IRF9640S, SiHF9640S, IRF9640L, SiHF9640L Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 1600 Top 1200 Bottom 800 400 100 50 Starting T , Junction Temperature (°C) 91087_12c 4 7 125 150 Current regulator Same type as D.U.T. ...

Page 7

... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91087. Document Number: 91087 S10-1728-Rev ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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