SI4842BDY-T1-E3 Vishay, SI4842BDY-T1-E3 Datasheet

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SI4842BDY-T1-E3

Manufacturer Part Number
SI4842BDY-T1-E3
Description
MOSFET Power 30V 23A 3.5W
Manufacturer
Vishay
Datasheet

Specifications of SI4842BDY-T1-E3

Transistor Polarity
N-Channel
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.0057 Ohm @ 4.5 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
28 A
Power Dissipation
6250 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Continuous Drain Current Id
28A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
5.7mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1.4V
Power Dissipation Pd
6.25W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4842BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
289
Part Number:
SI4842BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI4842BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
3 000
Part Number:
SI4842BDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 90 °C/W.
Document Number: 73532
S09-0228-Rev. C, 09-Feb-09
Ordering Information: Si4842BDY-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
30
(V)
C
G
S
S
S
= 25 °C.
0.0057 at V
0.0042 at V
1
2
3
4
Si4842BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
R
DS(on)
Top View
SO-8
GS
GS
J
(Ω)
= 150 °C)
= 4.5 V
b, d
= 10 V
N-Channel 30-V (D-S) MOSFET
8
7
6
5
I
D
D
D
D
D
28
24
(A)
Steady State
a
t ≤ 10 s
T
T
T
T
T
T
L = 0.1 mH
T
T
T
T
C
C
C
C
C
A
A
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
g
29 nC
(Typ.)
Symbol
R
R
thJA
thJF
Symbol
T
J
V
V
E
I
I
P
, T
I
DM
I
AS
DS
GS
AS
D
S
D
FEATURES
stg
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
Available
Typical
32
15
g
Tested
®
Power MOSFETs
G
- 55 to 150
N-Channel MOSFET
2.7
3.0
1.9
Limit
20
16
± 20
6.25
5.6
4.0
30
28
23
60
35
61
b, c
b, c
b, c
b, c
b, c
D
S
Maximum
42
20
Vishay Siliconix
Si4842BDY
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SI4842BDY-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4842BDY-T1-E3 (Lead (Pb)-free) Si4842BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy Maximum Power Dissipation ...

Page 2

... Si4842BDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 73532 S09-0228-Rev. C, 09-Feb- 0.9 1.2 1 Si4842BDY Vishay Siliconix 1.2 1.0 0.8 0.6 0.4 25 °C 0 125 ° °C 0 Gate-to-Source Voltage (V) GS Transfer Characteristics 4500 C iss 3600 2700 1800 C oss 900 C rss Drain-to-Source Voltage (V) DS Capacitance 1 ...

Page 4

... Si4842BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100.000 T = 150 °C J 10.000 1.000 0.100 0.010 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.5 0.2 - 0 250 µ 0 Temperature (°C) J Threshold Voltage Limited by R www.vishay.com 4 0.030 ...

Page 5

... S09-0228-Rev. C, 09-Feb- 100 T - Case Temperature (°C) C Current Derating* 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si4842BDY Vishay Siliconix 125 150 2.0 1.6 1.2 0.8 0.4 0 100 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www.vishay.com 125 ...

Page 6

... Si4842BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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