ZVN2110GTA Diodes Inc, ZVN2110GTA Datasheet - Page 3

• Manufacturer Part Number: ZVN2110GTA
• Description: MOSFET Power N-Chnl 100V
• Manufacturer: Diodes Inc

Specifications of ZVN2110GTA

• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.5 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

500
400
300
200
100
100
80
Capacitance v drain-source voltage
60
40
20
0
Transconductance v drain current
0
0
V
I
D(on)
DS
10
0.2
-Drain Source Voltage (Volts)
- Drain Current (Amps)
V
DS=
20
0.4
25V
TYPICAL CHARACTERISTICS
30
0.6
0.8
40
1.0
50
C
C
C
3 - 389
iss
oss
rss
Transconductance v gate-source voltage
500
400
300
200
100
14
12
10
16
0
8
6
4
2
0
Gate charge v gate-source voltage
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
I
D=
V
2
GS
1A
-Gate Source Voltage (Volts)
Q-Charge (nC)
4
V
DS=
ZVN2110G
25V
6
V
20V
50V
80V
DS
=
8
10