ZXMN6A07ZTA Diodes Inc, ZXMN6A07ZTA Datasheet - Page 2

• Manufacturer Part Number: ZXMN6A07ZTA
• Description: MOSFET Power 60V N-Chnl UMOS
• Manufacturer: Diodes Inc

Specifications of ZXMN6A07ZTA

• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.45 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.2 A
• Power Dissipation: 1.5 W
• Mounting Style: SMD/SMT
• Package / Case: SOT-89
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
(b) For a device surface mounted on FR4 PCB measured at t
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction
Issue 8 - January 2007
© Zetex Semiconductors plc 2007
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current @ V
Pulsed drain current
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Thermal resistance
Parameter
Junction to ambient
Junction to ambient
conditions.
temperature.
(c)
amb
amb
=25°C
=25°C
@ V
@ V
GS
GS
GS
(a)
(b)
= 10V; T
= 10V; T
= 10V; T
(c)
(b)
amb
amb
amb
=70°C
=25°C
=25°C
2
10 sec.
(b)
(b)
(a)
Symbol
Symbol
V
R
R
V
I
I
P
P
DM
SM
DSS
I
I
GS
D
S
D
D
JA
JA
Limit
Limit
ZXMN6A07Z
± 20
83.3
47.4
2.5
2.0
1.9
6.8
3.3
6.8
1.5
2.6
60
12
21
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mW/°C
mW/°C
°C/W
°C/W
Unit
Unit
W
W
A
A
A
A
V
V