IRF9630STRLPBF Vishay, IRF9630STRLPBF Datasheet - Page 7
![MOSFET Power P-Chan 200V 6.5 Amp](/photos/16/8/160884/smd220_sml.jpg)
IRF9630STRLPBF
Manufacturer Part Number
IRF9630STRLPBF
Description
MOSFET Power P-Chan 200V 6.5 Amp
Manufacturer
Vishay
Datasheet
1.IRF9630STRLPBF.pdf
(10 pages)
Specifications of IRF9630STRLPBF
Transistor Polarity
P-Channel
Package / Case
SMD-220
Gate Charge Qg
29 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.8 Ohm at 10 V
Forward Transconductance Gfs (max / Min)
2.8 S
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
6.5 A
Power Dissipation
3000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-6.5A
Drain Source Voltage Vds
-200V
On Resistance Rds(on)
800mohm
Rds(on) Test Voltage Vgs
-10V
Leaded Process Compatible
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Document Number: 91085
Re-Applied
Voltage
Reverse
Recovery
Current
+
-
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
GS
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
•
•
•
SD
Diode Recovery
Current
dv/dt
Forward Drop
•
•
•
di/dt
D =
-
G
Period
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
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