IRF9630STRLPBF Vishay, IRF9630STRLPBF Datasheet - Page 7

• Manufacturer Part Number: IRF9630STRLPBF
• Description: MOSFET Power P-Chan 200V 6.5 Amp
• Manufacturer: Vishay

Specifications of IRF9630STRLPBF

• Transistor Polarity: P-Channel
• Package / Case: SMD-220
• Gate Charge Qg: 29 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.8 Ohm at 10 V
• Forward Transconductance Gfs (max / Min): 2.8 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 6.5 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -6.5A
• Drain Source Voltage Vds: -200V
• On Resistance Rds(on): 800mohm
• Rds(on) Test Voltage Vgs: -10V
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 91085
Re-Applied
Voltage
Reverse
Recovery
Current
+
-
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
GS
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
•
•
•
SD
Diode Recovery
Current
dv/dt
Forward Drop
•
•
•
di/dt
D =
-
G
Period
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
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