IRFR120TRPBF Vishay, IRFR120TRPBF Datasheet - Page 8

• Manufacturer Part Number: IRFR120TRPBF
• Description: MOSFET Power N-Chan 100V 7.7 Amp
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRFR120TRPBF

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.27 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.7 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Continuous Drain Current Id: 7.7A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 270mohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.27Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TO-252AA (HIGH VOLTAGE)
Notes
1. Package body sizes exclude mold flash, protrusion or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 0.10 mm per side.
2. Package body sizes determined at the outermost extremes of the plastic body exclusive of mold flash, gate burrs and interlead flash, but
3. The package top may be smaller than the package bottom.
4. Dimension "b" does not include dambar protrusion. Allowable dambar protrusion shall be 0.10 mm total in excess of "b" dimension at maximum
Document Number: 91344
Revision: 15-Sep-08
ECN: S-81965-Rev. A, 15-Sep-08
DWG: 5973
material condition. The dambar cannot be located on the lower radius of the foot.
including any mismatch between the top and bottom of the plastic body.
DIM.
A1
D1
E1
L1
L2
L3
L4
b2
b3
c2
D
H
E
A
L
b
e
c
θ
D1
MIN.
6.40
1.40
0.89
0.64
6.00
9.40
0.64
0.77
5.21
2.20
0.00
0.45
0.45
5.30
4.40
0'
E1
MILLIMETERS
0.508 BSC
2.286 BSC
2.743 REF
c
A
θ
MAX.
10.40
c2
6.73
1.77
1.27
1.01
6.22
0.88
1.14
5.46
2.38
0.13
0.60
0.58
A1
L
L2
10'
-
-
L1
D
b
b3
E
e
b2
0.252
0.055
0.035
0.025
0.236
0.370
0.025
0.030
0.205
0.087
0.000
0.018
0.018
0.209
0.173
MIN.
Package Information
0'
L3
L4
H
0.108 REF
0.020 BSC
0.090 BSC
INCHES
Vishay Siliconix
MAX.
0.265
0.070
0.050
0.040
0.245
0.409
0.035
0.045
0.215
0.094
0.005
0.024
0.023
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10'
-
-
1