ZXMN4A06GTA Diodes Inc, ZXMN4A06GTA Datasheet - Page 3
![MOSFET Power 40V N-Chnl UMOS](/photos/16/6/160693/sot223-4_sml.jpg)
ZXMN4A06GTA
Manufacturer Part Number
ZXMN4A06GTA
Description
MOSFET Power 40V N-Chnl UMOS
Manufacturer
Diodes Inc
Datasheet
1.ZXMN4A06GTA.pdf
(7 pages)
Specifications of ZXMN4A06GTA
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.05 Ohm @ 10 V
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7 A
Power Dissipation
3900 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-223
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
ISSUE 1 - MAY 2002
100m
10m
70
60
50
40
30
20
10
10
100µ 1m 10m 100m 1
0
1
Transient Thermal Impedance
R
Limited
Single Pulse
T
V
T
D= 0.5
D= 0.2
DS(on)
amb
amb
DS
DC
= 25° C
Safe Operating Area
= 25° C
Drain-Source Voltage (V)
1s
Pulse Width (s)
1
100ms
10ms
1ms
D= 0.1
D= 0.05
10
100µs
10
Single Pulse
CHARACTERISTICS
100
1k
3
100
2.0
1.6
1.2
0.8
0.4
0.0
10
100µ 1m 10m 100m 1
1
0
20
Pulse Power Dissipation
Temperature (° C)
Derating Curve
40
Pulse Width (s)
60
ZXMN4A06G
80 100 120 140 160
Single Pulse
T
10
amb
= 25° C
100
1k