ZXMC4A16DN8TA Diodes Inc, ZXMC4A16DN8TA Datasheet - Page 7

• Manufacturer Part Number: ZXMC4A16DN8TA
• Description: MOSFET Power 40V N/P-Channel Enhancement MOSFET
• Manufacturer: Diodes Inc

Specifications of ZXMC4A16DN8TA

• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.05 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.2 A @ N Channel or 4.7 A @ P Channel
• Power Dissipation: 2100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ISSUE 1 - NOVEMBER 2004
ELECTRICAL CHARACTERISTICS (at T
NOTES
(1) Measured under pulsed conditions. Pulse width
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
Turn-On-Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
(3)
(2) (3)
(1)
(3)
(3)
(1) (3)
(1)
300 s; duty cycle
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
amb
(BR)DSS
GS(th)
DS(on)
fs
iss
oss
rss
SD
g
g
gs
gd
rr
= 25°C unless otherwise stated)
7
2%.
MIN.
-1.0
-40
1000
-0.86
TYP.
180
160
6.8
3.7
5.5
3.2
7.3
33
18
15
26
27
25
MAX. UNIT CONDITIONS
0.060
0.100
-0.95
-1.0
100
ZXMC4A16DN8
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
I
V
V
I
V
V
V
V
f=1MHz
V
R
V
I
V
I
T
V
T
di/dt=100A/ s
D
D
D
D
GS
GS
DS
DS
j
j
DS
GS
DS
DD
G
DS
GS
= -250 A, V
= -250 A, V
= -3.8A
= -3.8A
=25°C, I
=25°C, I
≅ 6.0 , V
= -20V, V
= -40V, V
= -10V, I
= -4.5V, I
= -15V, I
= -20V, V
= -20V, V
=±20V, V
= -20V, I
=0V
S E M I C O N D U C T O R S
S
S
= -3.4A,
= -3A,
D
D
GS
D
D
GS
DS
GS
= -3.8A
= -3.8A
GS
GS
DS
= -1A
GS
= -2.9A
= -10V
= 10V
=0V
=0V
=0V
= -5V
=V
=0V
GS