ZXMN6A11GTA Diodes Inc, ZXMN6A11GTA Datasheet - Page 5

• Manufacturer Part Number: ZXMN6A11GTA
• Description: MOSFET Power 60V N-Chnl UMOS
• Manufacturer: Diodes Inc

Specifications of ZXMN6A11GTA

• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.12 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.4 A
• Power Dissipation: 3900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Fall Time: 4.6 ns
• Rise Time: 3.5 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
ZXMN6A11G
Document number: DS33556 Rev. 5 - 2
0.1
0.1
0.1
10
10
1
1
1
2
On-Resistance v Drain Current
T = 25°C
T = 25°C
0.1
T = 150°C
Typical Transfer Characteristics
V
3V
DS
V
V
DS
= 10V
GS
Output Characteristics
Drain-Source Voltage (V)
Gate-Source Voltage (V)
I
D
Drain Current (A)
3
1
T = 25°C
3.5V
1
10V 5V
4V
4
10
10
4.5V
www.diodes.com
10V
5V
2.5V
3.5V
3V
V
4V
V
GS
GS
5
5 of 8
0.1
0.1
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
10
Source-Drain Diode Forward Voltage
10
1
1
-50
Normalised Curves v Temperature
T = 150°C
T = 150°C
0.4
0.1
V
V
Tj Junction Temperature (°C)
DS
SD
Output Characteristics
Drain-Source Voltage (V)
0
Source-Drain Voltage (V)
Diodes Incorporated
0.6
A Product Line of
1
V
I
D
50
GS
= 250uA
T = 25°C
0.8
V
I
D
= V
GS
= 2.5A
= 10V
DS
10V 5V
100
1.0
ZXMN6A11G
10
V
R
GS(th)
DS(on)
4V
3.5V
3V
V
2V
2.5V
GS
© Diodes Incorporated
1.2
150
October 2010