SI4628DY-T1-GE3 Vishay, SI4628DY-T1-GE3 Datasheet - Page 2

• Manufacturer Part Number: SI4628DY-T1-GE3
• Description: MOSFET Power 30V 38A 7.8W 3.0mohm @ 10V
• Manufacturer: Vishay

Specifications of SI4628DY-T1-GE3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.003 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 73 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 25.4 A
• Power Dissipation: 3500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Continuous Drain Current Id: 38mA
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 3mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.5V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Si4628DY
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Pulse Diode Forward Current
Body Diode Voltage
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On -State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode and Schottky Characteristics
Continuous Source-Drain Diode Current
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
b
a
a
a
J
= 25 °C, unless otherwise noted
a
Symbol
R
V
I
t
t
t
I
I
C
t
V
D(on)
DS(on)
C
V
GS(th)
C
Q
Q
d(on)
d(off)
d(off)
GSS
I
DSS
d(on)
Q
g
Q
R
I
SM
t
t
t
t
t
DS
oss
t
t
SD
iss
rss
S
rr
gd
a
b
fs
gs
r
f
r
f
g
g
rr
I
F
V
V
V
I
V
I
= 13 A, dI/dt = 100 A/µs, T
D
DS
D
DS
DS
DS
≅ 10 A, V
≅ 10 A, V
= 30 V, V
= 15 V, V
V
= 15 V, V
= 15 V, V
V
V
V
V
V
V
DS
V
V
V
DD
DD
DS
DS
GS
DS
GS
DS
GS
Test Conditions
= 0 V, V
= 15 V, R
= 15 V, R
= 30 V, V
≥ 5 V, V
= 4.5 V, I
= 10 V, I
= 15 V, I
= V
= 0 V, I
T
GEN
f = 1 MHz
GEN
C
GS
I
GS
S
GS
GS
GS
= 25 °C
= 2 A
= 0 V, T
= 4.5 V, R
= 4.5 V, I
= 10 V, R
, I
= 10 V, I
GS
= 0 V, f = 1 MHz
D
GS
D
D
D
D
L
L
GS
= 1 mA
= 1 mA
= ± 20 V
= 20 A
= 20 A
= 1.5 Ω
= 1.5 Ω
= 15 A
= 10 V
= 0 V
J
D
= 100 °C
D
g
g
J
= 20 A
= 20 A
= 1 Ω
= 1 Ω
= 25 °C
Min.
1.0
0.4
30
40
0.0024
0.0030
3450
Typ.
0.10
27.5
0.44
810
260
7.5
8.3
7.5
1.7
73
58
28
20
39
13
12
10
36
28
21
15
13
S09-0871-Rev. A, 18-May-09
9
Document Number: 64811
0.0030
0.0038
± 100
Max.
0.25
0.53
2.5
3.4
70
87
42
55
40
75
26
24
20
70
18
70
55
42
7
Unit
mA
nC
nC
nA
pF
ns
ns
ns
Ω
V
A
S
Ω
A
V