SIR460DP-T1-GE3 Vishay, SIR460DP-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SIR460DP-T1-GE3
• Description: MOSFET Power 30V 40A 48W
• Manufacturer: Vishay

Specifications of SIR460DP-T1-GE3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0047 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 60 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 24.3 A
• Power Dissipation: 5000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SO
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 3.8mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: PowerPAK SO
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SiR460DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.2
- 0.4
- 0.6
- 0.8
0.01
100
0.4
0.2
0.0
0.1
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
T
SD
0
J
= 150 °C
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
0.6
50
I
D
= 250 µA
75
T
0.8
J
= 25 °C
0.01
100
0.1
10
100
1
0.01
Limited by R
I
D
1.0
* V
Safe Operating Area, Junction-to-Ambient
= 5 mA
Single Pulse
125
T
GS
A
= 25 °C
> minimum V
New Product
V
1.2
150
DS(on)
0.1
DS
- Drain-to-Source Voltage (V)
*
GS
at which R
1
BVDSS Limited
DS(on)
0.020
0.015
0.010
0.005
0.000
250
200
150
100
10
50
0
0
is specified
0 .
0
0
On-Resistance vs. Gate-to-Source Voltage
1
I
Single Pulse Power, Junction-to-Ambient
D
1
= 15 A
1 ms
10 ms
100 ms
1 s
10 s
DC
2
100
V
0.01
GS
3
- Gate-to-Source Voltage (V)
4
Time (s)
S09-0140-Rev. A, 02-Feb-09
0.1
5
Document Number: 69095
6
7
1
T
T
J
J
8
= 125 °C
= 25 °C
9
10
1
0