2N2369A Central Semiconductor, 2N2369A Datasheet

2N2369A

Manufacturer Part Number

2N2369A

Description

Bipolar Small Signal NPN Fast SW SS

Manufacturer

Central Semiconductor

Datasheet

1.PN2369A.pdf (2 pages)

Specifications of 2N2369A

Dc Collector/base Gain Hfe Min

Minimum Operating Temperature

- 65 C

Configuration

Single

Transistor Polarity

NPN

Mounting Style

Through Hole

Package / Case

TO-18

Collector- Emitter Voltage Vceo Max

15 V

Emitter- Base Voltage Vebo

4.5 V

Maximum Dc Collector Current

0.2 A

Power Dissipation

360 mW

Maximum Operating Frequency

500 MHz

Maximum Operating Temperature

+ 150 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Manufacturer:

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MAXIMUM RATINGS:

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Power Dissipation

Power Dissipation (T C =25°C)

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS: (T A =25°C unless otherwise noted)

SYMBOL

I CBO

BV CBO

BV CES

BV CEO

BV EBO

V CE(SAT)

V BE(SAT)

h FE

NPN SILICON TRANSISTOR

TEST CONDITIONS

V CB =20V

V CB =20V, T A =150°C

I C =10µA

I C =10mA

I E =10µA

I C =10mA, I B =1.0mA

I C =10mA, I B =1.0mA, T A =125°C

I C =30mA, I B =3.0mA

I C =100mA, I B =10mA

I C =10mA, I B =1.0mA

I C =30mA, I B =3.0mA

I C =100mA, I B =10mA

V CE =0.35V, I C =10mA

V CE =0.35V, I C =10mA, T A =–55°C

V CE =0.4V, I C =30mA

V CE =1.0V, I C =100mA

TO-18 CASE

2N2369A

(T A =25°C)

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N2369A is an

epitaxial planar NPN Silicon Transistor designed for

ultra high speed saturated switching applications.

MARKING: FULL PART NUMBER

SYMBOL

T J , T stg

V CBO

V CEO

V EBO

V CES

Θ JC

I CM

Θ JA

MIN

700

P D

4.5

I C

-65 to +200

MAX

1.15

200

500

360

300

486

146

400

200

250

500

850

120

4.5

1.2

1.6

w w w. c e n t r a l s e m i . c o m

R0 (10-March 2011)

UNITS

°C/W

°C

µA

Related parts for 2N2369A

2N2369A Summary of contents

Page 1

... I C =100mA =10mA =0.35V =10mA =0.35V =10mA =–55° =0.4V =30mA =1.0V =100mA DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2369A is an epitaxial planar NPN Silicon Transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER SYMBOL V CBO 40 V CES 40 V CEO 15 V EBO 4 ...

Page 2

... NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued =25°C unless otherwise noted) SYMBOL TEST CONDITIONS =10V =10mA, f=100MHz =5.0V =0, f=140kHz =3.0V =10mA =3.0mA =1.5mA t off V CC =3.0V =10mA =3.0mA =1.5mA =10V =10mA =10mA TO-18 CASE - MECHANICAL OUTLINE MIN MAX UNITS 500 MHz 4 ...

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