ZXTC2063E6TA Diodes Inc, ZXTC2063E6TA Datasheet

Bipolar Small Signal 40V 1A Medium Power TRANSISTOR

ZXTC2063E6TA

Manufacturer Part Number
ZXTC2063E6TA
Description
Bipolar Small Signal 40V 1A Medium Power TRANSISTOR
Manufacturer
Diodes Inc
Datasheet

Specifications of ZXTC2063E6TA

Minimum Operating Temperature
- 55 C
Configuration
Dual
Transistor Polarity
NPN/PNP
Mounting Style
SMD/SMT
Package / Case
SOT-23
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
7 V
Maximum Dc Collector Current
3.5 A at NPN, 3 A at PNP
Power Dissipation
1700 mW
Maximum Operating Frequency
190 MHz at NPN, 270 MHz at PNP
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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ZXTC2063E6
40V, SOT23-6, complementary medium power transistors
Summary
BV
BV
I
V
R
P
Description
Advanced process capability has been used to achieve
this high performance device. Combining NPN and PNP
transistors in the SOT23-6 package provides a compact
solution for the intended applications.
Features
Applications
Ordering information
Device marking
2063
Issue 1 - October 2007
© Zetex Semiconductors plc 2007
C(cont)
Device
ZXTC2063E6TA
D
CE(sat)
CE(sat)
CEO
ECO
NPN - PNP combination
Very low saturation voltage
High gain
SOT23-6 package
MOSFET and IGBT gate driving
Motor drive
= 1.1W
> 40 (-40)V
> 6 (-3)V
= 3.5 (-3)A
= 38 (58)m
< 60 (-90)mV @ 1A
reel size
(inches)
7
Tape width
(mm)
8
1
Quantity
per reel
3000
B1
E1
C1
C1
C2
B1
B2
Top view
www.zetex.com
E2
C2
E1
B2
E2

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ZXTC2063E6TA Summary of contents

Page 1

... Very low saturation voltage • High gain • SOT23-6 package Applications • MOSFET and IGBT gate driving • Motor drive Ordering information Device reel size (inches) ZXTC2063E6TA 7 Device marking 2063 Issue 1 - October 2007 © Zetex Semiconductors plc 2007 B1 Tape width Quantity (mm) per reel 8 3000 1 ...

Page 2

Absolute maximum and thermal ratings Parameter Collector-base voltage Collector-emitter voltage Emitter-collector voltage (reverse blocking) Emitter-base voltage Continuous collector current Peak pulse current Base current Power dissipation @ T = 25°C amb Linear derating factor Power dissipation @ T = 25°C ...

Page 3

Thermal characteristics Issue 1 - October 2007 © Zetex Semiconductors plc 2007 ZXTC2063E6 3 www.zetex.com ...

Page 4

Electrical characteristics (at T Parameter Symbol Collector-base BV CBO breakdown voltage Collector-emitter BV CEO breakdown voltage (base open) Emitter-base BV EBO breakdown voltage Emitter-collector BV ECX breakdown voltage (reverse blocking) Emitter-collector BV ECO breakdown voltage (base open) Collector-base cut-off I ...

Page 5

NPN Characteristics Issue 1 - October 2007 © Zetex Semiconductors plc 2007 ZXTC2063E6 5 www.zetex.com ...

Page 6

PNP Characteristics Issue 1 - October 2007 © Zetex Semiconductors plc 2007 ZXTC2063E6 6 www.zetex.com ...

Page 7

Package outline - SOT23-6 DIM Min. A 0.90 A1 0.00 A2 0.90 b 0.35 C 0.09 D 2.70 E 2.20 E1 1. 0° Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches ...

Page 8

Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The ...

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