2N2222A Central Semiconductor, 2N2222A Datasheet
2N2222A
Manufacturer Part Number
2N2222A
Description
Bipolar Small Signal NPN Gen Pur SS
Manufacturer
Central Semiconductor
Datasheet
1.2N2222A.pdf
(2 pages)
Specifications of 2N2222A
Dc Collector/base Gain Hfe Min
35 at 0.1 mA at 10 V
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Package / Case
TO-18
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
0.8 A
Power Dissipation
0.4 W
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 200 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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6 500
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Part Number:
2N2222AJANTX
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Quantity:
20 000
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2221A, 2N2222A types are Silicon NPN Planar Epitaxial Transistors designed for
small signal general purpose and switching applications.
MAXIMUM RATINGS: (T A =25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Power Dissipation (T C =25°C)
Operating and Storage
Junction Temperature
Thermal Resistance
Thermal Resistance
ELECTRICAL CHARACTERISTICS: (T A =25°C unless otherwise noted)
SYMBOL
I CBO
I CBO
I EBO
I CEV
BV CBO
BV CEO
BV EBO
V CE(SAT)
V CE(SAT)
V BE(SAT)
V BE(SAT)
h FE
h FE
h FE
h FE
h FE
h FE
h FE
TEST CONDITIONS
V CB =60V
V CB =60V, T A =150°C
V EB =3.0V
V CE =60V, V EB =3.0V
I C =10µA
I C =10mA
I E =10µA
I C =150mA, I B =15mA
I C =500mA, I B =50mA
I C =150mA, I B =15mA
I C =500mA, I B =50mA
V CE =10V, I C =0.1mA
V CE =10V, I C =1.0mA
V CE =10V, I C =10mA
V CE =10V, I C =10mA, T A =-55°C
V CE =10V, I C =150mA
V CE =1.0V, I C =150mA
V CE =10V, I C =500mA
SYMBOL
Θ JA
Θ JC
V CBO
V CEO
V EBO
T J ,T stg
I C
P D
P D
(Continued)
MIN
6.0
0.6
75
40
20
25
35
15
40
20
25
2N2221A
-65 to +200
800
400
438
146
MAX
120
0.3
1.0
1.2
2.0
6.0
1.2
75
40
10
10
10
10
NPN SILICON TRANSISTOR
100
JEDEC TO-18 CASE
0.6
MIN
6.0
50
40
75
40
35
50
75
35
2N2222A
2N2221A
2N2222A
300
MAX
0.3
1.0
1.2
2.0
10
10
10
10
UNITS
°C/W
°C/W
UNITS
mA
mW
°C
nA
µA
nA
nA
V
V
V
W
V
V
V
V
V
V
V
DATA SHEET
R2
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2N2222A Summary of contents
Page 1
... DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221A, 2N2222A types are Silicon NPN Planar Epitaxial Transistors designed for small signal general purpose and switching applications. MAXIMUM RATINGS =25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Power Dissipation (T C =25°C) Operating and Storage ...
Page 2
... ELECTRICAL CHARACTERISTICS: Continued SYMBOL TEST CONDITIONS =20V =20mA, f=100MHz =10V =0, f=100kHz =0.5V =0, f=100kHz =10V =1.0mA, f=1.0kHz =10V =10mA, f=1.0kHz =10V =1.0mA, f=1.0kHz =10V =10mA, f=1.0kHz =10V =1.0mA, f=1.0kHz =10V =10mA, f=1.0kHz =10V =1.0mA, f=1.0kHz =10V =10mA, f=1.0kHz rb =10V =20mA, f=31.8MHz =10V =100µ ...