CMPT2907A Central Semiconductor, CMPT2907A Datasheet

Bipolar Small Signal PNP Gen Purpose

CMPT2907A

Manufacturer Part Number
CMPT2907A
Description
Bipolar Small Signal PNP Gen Purpose
Manufacturer
Central Semiconductor
Datasheet

Specifications of CMPT2907A

Dc Collector/base Gain Hfe Min
75 at 0.1 mA at 10 V
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Package / Case
SOT-23
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
- 5 V
Maximum Dc Collector Current
0.6 A
Power Dissipation
350 mW
Maximum Operating Frequency
200 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
3000 PCS T&R
MAXIMUM RATINGS: (T A =25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS: (T A =25°C unless otherwise noted)
SYMBOL
I CBO
I CBO
I CEV
BV CBO
BV CEO
BV EBO
V CE(SAT)
V CE(SAT)
V BE(SAT)
V BE(SAT)
h FE
h FE
h FE
h FE
h FE
f T
C ob
C ib
PNP SILICON TRANSISTOR
SURFACE MOUNT
TEST CONDITIONS
V CB =50V
V CB =50V, T A =125°C
V CE =30V, V EB =0.5V
I C =10µA
I C =10mA
I E =10µA
I C =150mA, I B =15mA
I C =500mA, I B =50mA
I C =150mA, I B =15mA
I C =500mA, I B =50mA
V CE =10V, I C =0.1mA
V CE =10V, I C =1.0mA
V CE =10V, I C =10mA
V CE =10V, I C =150mA
V CE =10V, I C =500mA
V CE =20V, I C =50mA, f=100MHz
V CB =10V, I E =0, f=1.0MHz
V BE =2.0V, I C =0, f=1.0MHz
SOT-23 CASE
CMPT2907A
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT2907A
type is a PNP silicon transistor manufactured by the
epitaxial planar process, epoxy molded in a surface
mount package, designed for small signal general
purpose and switching applications.
MARKING CODE: C2F
SYMBOL
T J , T stg
V CBO
V CEO
V EBO
Θ JA
MIN
100
100
100
200
P D
5.0
I C
60
60
75
50
-65 to +150
MAX
600
350
357
300
5.0
0.4
1.6
1.3
2.6
8.0
60
60
10
10
50
30
w w w. c e n t r a l s e m i . c o m
R5 (1-February 2010)
UNITS
UNITS
°C/W
MHz
mW
mA
nA
µA
nA
pF
pF
°C
V
V
V
V
V
V
V
V
V
V

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CMPT2907A Summary of contents

Page 1

... V CE =20V =50mA, f=100MHz =10V =0, f=1.0MHz =2.0V =0, f=1.0MHz DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2907A type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and switching applications. MARKING CODE: C2F SYMBOL ...

Page 2

... CMPT2907A SURFACE MOUNT PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued =25°C unless otherwise noted) SYMBOL TEST CONDITIONS =30V =0.5V =150mA =15mA =30V =0.5V =150mA =15mA =30V =0.5V =150mA =15mA t off V CC =6.0V =150mA =15mA =6.0V =150mA =15mA =6.0V =150mA =15mA SOT-23 CASE - MECHANICAL OUTLINE ...

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