2N5109 Central Semiconductor, 2N5109 Datasheet
2N5109
Manufacturer Part Number
2N5109
Description
Bipolar Small Signal NPN Wide Bd AM
Manufacturer
Central Semiconductor
Datasheet
1.2N5109.pdf
(2 pages)
Specifications of 2N5109
Dc Collector/base Gain Hfe Min
70 at 50 mA at 15 V
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Package / Case
TO-39
Collector- Emitter Voltage Vceo Max
20 V
Emitter- Base Voltage Vebo
3 V
Continuous Collector Current
400 mA
Maximum Dc Collector Current
0.4 A
Power Dissipation
1 W
Maximum Operating Frequency
1200 MHz
Maximum Operating Temperature
+ 200 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N5109
Manufacturer:
MICROSEMI/美高森美
Quantity:
20 000
Part Number:
2N5109A
Manufacturer:
ASI
Quantity:
20 000
Part Number:
2N5109C
Manufacturer:
ASI
Quantity:
20 000
MAXIMUM RATINGS: (T A =25°C unless otherwise noted)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Power Dissipation (T C =75°C)
Operating and Storage
Junction Temperature
ELECTRICAL CHARACTERISTICS:
SYMBOL
I CEV
I CEV
I CEO
I EBO
BV CBO
BV CER
BV CEO
V CE(SAT)
h FE
h FE
f T
C ob
NF
G PE
NPN RF TRANSISTOR
TO-39 CASE
TEST CONDITIONS
V CE =35V, V BE =1.5V
V CE =15V, V BE =1.5V, T C =150°C
V CE =15V
V EB =3.0V
I C =0.1mA
I C =5.0mA, R BE =10Ω
I C =5.0mA
I C =100mA, I B =10mA
V CE =15V, I C =50mA
V CE =5.0V, I C =360mA
V CE =15V, I C =50mA, f=200MHz
V CB =15V, I E =0, f=1.0MHz
V CE =15V, I C =10mA, f=200MHz
V CE =15V, I C =50mA, f=200MHz
SILICON
2N5109
(T A =25°C unless otherwise noted)
SYMBOL
T J ,T stg
V CBO
V CEO
V EBO
P D
P D
I C
I B
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5109 is a
Silicon NPN Epitaxial Planar RF Transistor
mounted in a hermetically sealed package
designed for high frequency amplifier applications.
MARKING CODE: FULL PART NUMBER
Central
Semiconductor Corp.
1200
MIN
5.0
40
40
20
40
11
-65 to +200
400
400
3.0
1.0
2.5
40
20
TYP
3.0
MAX
R3 (23-June 2005)
100
150
5.0
5.0
0.5
3.5
20
TM
UNITS
mA
mA
UNITS
°C
W
W
V
V
V
MHz
mA
mA
μA
μA
dB
dB
pF
V
V
V
V
Related parts for 2N5109
2N5109 Summary of contents
Page 1
... V CB =15V =0, f=1.0MHz =15V =10mA, f=200MHz =15V =50mA, f=200MHz Central Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING CODE: FULL PART NUMBER SYMBOL V CBO 40 ...
Page 2
... Central TM Semiconductor Corp. TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) EMITTER 2) BASE 3) COLLECTOR MARKING CODE: Full Part Number 2N5109 NPN RF TRANSISTOR DIMENSIONS INCHES MILLIMETERS SYMBOL MIN MAX MIN MAX A (DIA) 0.335 0.370 8.51 9.40 B (DIA) 0.315 0.335 8.00 8. 0.040 - 1.02 D 0.240 0.260 6 ...