BCX5616TA Diodes Inc, BCX5616TA Datasheet
![Bipolar Small Signal NPN Medium Power](/photos/16/6/160694/sot89_sml.jpg)
BCX5616TA
Manufacturer Part Number
BCX5616TA
Description
Bipolar Small Signal NPN Medium Power
Manufacturer
Diodes Inc
Datasheets
1.BCX5616TC.pdf
(1 pages)
2.BCX5616TA.pdf
(7 pages)
3.BCX5616TA.pdf
(1 pages)
4.BCX5616TA.pdf
(7 pages)
Specifications of BCX5616TA
Minimum Operating Temperature
- 65 C
Configuration
Single Dual Collector
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Package / Case
SOT-89
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1 A
Power Dissipation
1 W
Maximum Operating Frequency
150 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BCX5616TA
Manufacturer:
HEPHOTONI
Quantity:
100
Company:
Part Number:
BCX5616TA
Manufacturer:
DIODES
Quantity:
158 000
Company:
Part Number:
BCX5616TA
Manufacturer:
ZETEX
Quantity:
1 000
Part Number:
BCX5616TA
Manufacturer:
DIODES/美台
Quantity:
20 000
SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 5 – MARCH 2001
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Collector-Base
Breakdown voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Output Capacitance
COMPLEMENTARY TYPE – BCX5316
PARTMARKING DETAIL – BL
amb
=25°C
SYMBOL MIN.
V
V
V
I
I
V
V
h
f
C
CBO
EBO
T
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(on)
obo
100
80
5
25
100
25
150
amb
TBA
TYP.
SYMBOL
V
V
I
I
P
T
V
CM
C
tot
j
CBO
CEO
EBO
:T
= 25°C unless otherwise stated).
stg
MAX. UNIT CONDITIONS.
0.1
20
20
0.5
1.0
250
15
V
V
V
nA
V
V
MHz
pF
A
A
-65 to +150
IC =100 A
IC =10mA
I
V
V
V
I
I
I
I
I
I
f=100MHz
V
E
C
C
C
C
C
C
VALUE
CB
CB
EB
CB
=10 A
=500mA, I
=500mA, V
=5mA, V
=150mA, V
=500mA, V
=50mA, V
100
80
5
2
1
1
=4V
=30V
=30V, T
=10V, f=1MHz
BCX5616
C
CE
amb
SOT89
CE
B
B
CE
CE
CE
=2V*
=50mA*
=10V,
=150°C
=2V*
=2V*
=2V*
C
UNIT
W
°C
A
A
V
V
V
E