BSR33TA Diodes Inc, BSR33TA Datasheet

Bipolar Small Signal PNP Medium Power

BSR33TA

Manufacturer Part Number

BSR33TA

Description

Bipolar Small Signal PNP Medium Power

Manufacturer

Diodes Inc

Datasheet

1.BSR33TA.pdf (1 pages)

Specifications of BSR33TA

Minimum Operating Temperature

- 65 C

Configuration

Single Dual Collector

Transistor Polarity

PNP

Mounting Style

SMD/SMT

Package / Case

SOT-89

Collector- Emitter Voltage Vceo Max

80 V

Emitter- Base Voltage Vebo

- 5 V

Continuous Collector Current

- 1 A

Maximum Dc Collector Current

1 A

Power Dissipation

1 W

Maximum Operating Frequency

100 MHz

Maximum Operating Temperature

+ 150 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

BSR33TA

Manufacturer:

DIODES/美台

Quantity:

20 000

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Download datasheet (41Kb)

SOT89 PNP SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 4 – MARCH 2001

COMPLEMENTARY TYPE –

PARTMARKING DETAILS –

ABSOLUTE MAXIMUM RATINGS.

ELECTRICAL CHARACTERISTICS (at T

*Measured under pulsed conditions.

Spice parameter data is available upon request for this device

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

Operating and Storage Temperature Range

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off Current I

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Static Forward Current

Transfer Ratio

Output Capacitance

Input Capacitance

Transition Frequency

Turn-On Time

Turn-Off Time

amb

=25°C

SYMBOL

V

V

V

V

V

h

C

C

f

T

T

CBO

T

FE

on

off

(BR)CBO

(BR)CEO

(BR)EBO

CE(sat)

BE(sat)

obo

ibo

BSR43

BR4

MIN.

-90

-80

-5

30

100

50

100

amb

TBA

MAX.

-100

-50

-0.25

-0.5

-1.0

-1.2

300

20

120

500

650

SYMBOL

V

V

V

I

I

P

T

= 25°C unless otherwise stated).

CM

C

TOT

j

CBO

CEO

EBO

:T

stg

UNIT

V

V

V

nA

V

V

V

V

pF

pF

MHz

ns

ns

A

-65 to +150

CONDITIONS.

I

I

I

V

V

I

I

I

I

I

I

I

V

V

I

f =35MHz

V

I

C

C

E

C

C

C

C

C

C

C

C

B1

CB

CB

CB

EB

CC

=-100 A

=-10mA

=-10 A

=-150mA, I

=-50mA, V

VALUE

=-150mA, I

=-500mA, I

=-500mA, I

=-100 A, V

=-100mA, V

=-500mA, V

=-I

=-60V

=-60V, T

-90

-80

=-0.5V, f =1MHz

=-10V, f =1MHz

=-20V, I

-5

-2

-1

1

B2

BSR33

C

=-5mA

SOT89

amb

C

CE

B

B

B

B

B

CE

=-100mA

=-15mA*

CE

CE

=-10V

=-15mA*

=-50mA*

=-50mA*

=125°C

=-5V*

=-5V*

=-5V*

C

UNIT

°C

W

A

A

V

V

V

E

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