2SA1313YT5LFT Toshiba, 2SA1313YT5LFT Datasheet

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2SA1313YT5LFT

Manufacturer Part Number
2SA1313YT5LFT
Description
Bipolar Small Signal SM SIG POWER TRANS
Manufacturer
Toshiba
Datasheet

Specifications of 2SA1313YT5LFT

Dc Collector/base Gain Hfe Min
25
Gain Bandwidth Product Ft
200 MHz
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Package / Case
TO-236MOD
Collector- Emitter Voltage Vceo Max
- 50 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
- 500 mA
Power Dissipation
200 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Audio Frequency Low Power Amplifier Applications
Driver Stage Amplifier Applications
Switching Applications
Absolute Maximum Ratings
Marking
Excellent h
High voltage: V
Complementary to 2SC3325
Small package
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
FE
linearity : h
CEO
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
= −50 V (min)
at V
FE (2)
CE
= 25 (min)
= −6 V, I
(Ta = 25°C)
Symbol
V
V
V
T
P
CBO
CEO
EBO
I
I
T
stg
C
B
C
2SA1313
j
C
= −400 mA
−55~150
Rating
−500
−50
−50
−50
200
150
−5
1
Unit
mW
mA
mA
°C
°C
V
V
V
Weight: 0.012 g (typ.)
JEDEC
JEITA
TOSHIBA
TO-236MOD
2-3F1A
SC-59
2007-11-01
2SA1313
Unit: mm

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2SA1313YT5LFT Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 2

Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Note: h classification O: 70~140, Y: 120~240 FE (1) h classification O: 25 (min (min) FE ...

Page 3

3 2SA1313 2007-11-01 ...

Page 4

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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