ZXTN649FTA Diodes Inc, ZXTN649FTA Datasheet - Page 4

• Manufacturer Part Number: ZXTN649FTA
• Description: Bipolar Small Signal Zetex Med. Power NPN
• Manufacturer: Diodes Inc

Specifications of ZXTN649FTA

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Collector- Emitter Voltage Vceo Max: 25 V
• Emitter- Base Voltage Vebo: 7 V
• Continuous Collector Current: 3 A
• Maximum Dc Collector Current: 6 A
• Power Dissipation: 725 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Static Forward Current Transfer Ratio (Note 5)
Collector-Emitter Saturation Voltage (Note 5)
Base-Emitter Turn-On Voltage (Note 5)
Base-Emitter Saturation Voltage (Note 5)
Notes:
Document Number DS31900 Rev. 2 - 2
ZXTN649F
5. Measured under pulsed conditions. Pulse width ≤ 300
Characteristic
@T
A
= 25°C unless otherwise specified
V
V
V
Symbol
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
I
I
CE(sat)
BE(sat)
BE(on)
h
µs. Duty cycle ≤ 2%
CBO
EBO
FE
www.diodes.com
4 of 7
Min
200
175
155
35
25
50
7
N PN L OW V
Typ
110
320
280
250
200
780
900
< 1
8.1
35
85
70
< 1
1000
Max
500
120
300
850
0.5
50
50
Diodes Incorporated
C E ( s a t )
A Product Line of
Unit
mV
mV
mV
mV
µA
 n A
nA
V
V
V
TRANSISTOR IN SO T-23
I
I
I
V
V
V
I
I
I
I
I
I
I
I
C
C
E
C
C
C
C
C
C
C
C
CB
CB
EB
= 100 µA
= 100 µA
= 10 mA
= 100mA, V
= 1A, V
= 2A, V
= 6A, V
=1A, I
= 3A, I
= 1A, V
= 1A, I
= 28V
= 28V, T
= 5.6V
Test Condition
B
B
B
CE
CE
CE
CE
= 100mV
= 300mV
= 100mV
amb
= 2V
= 2V
= 2V
= 2V
ZXTN649F
CE
© Diodes Incorporated
=100 °C
= 2V
October 2009