HN7G01FU-A(T5L,F,T Toshiba, HN7G01FU-A(T5L,F,T Datasheet - Page 2

• Manufacturer Part Number: HN7G01FU-A(T5L,F,T
• Description: Bipolar Small Signal Vceo=-12V Vds=20V Ic=-400mA Id=50mA
• Manufacturer: Toshiba

Specifications of HN7G01FU-A(T5L,F,T

• Dc Collector/base Gain Hfe Min: 300
• Configuration: Dual
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 12 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 400 mA
• Power Dissipation: 200 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Q1
Q2
Application Example
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Note 2: h
Gate leakage current
Drain-source breakdown voltage
Drain current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
(transistor)
(MOS-FET)
Characteristics
FE
Characteristics
classification A: 300~600, B: 500~1000
Electrical Characteristics
Electrical Characteristics
(power management switch)
V
V
V
R
CE (sat) (1)
CE (sat) (2)
V
Symbol
Symbol
(BR) DSS
DS (ON)
BE (sat)
⎪Y
I
I
I
I
CBO
EBO
h
GSS
DSS
V
(Note 2)
FE
th
fs
⎪
V
V
V
I
I
I
V
I
V
V
V
I
C
C
C
D
D
CB
EB
CE
GS
DS
DS
DS
= −10 mA, I
= −200 mA, I
= −200 mA, I
= 100 μA, V
= 10 mA, V
(Ta = 25°C)
(Ta = 25°C)
= −15 V, I
= −5 V, I
= −2 V, I
= 20 V, V
= 3 V, I
= 3 V, I
= 10 V, V
2
D
D
Test Condition
Test Condition
C
C
GS
= 0.1 mA
= 10 mA
B
DS
GS
E
GS
= 0
= −10 mA
B
B
= −0.5 mA
= 0
= −10 mA
= −10 mA
= 2.5 V
= 0
= 0
= 0
300
Min
Min
0.5
20
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
−0.87
−110
Typ.
Typ.
−15
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
HN7G01FU
2007-11-01
1000
−250
−0.1
−0.1
−1.2
Max
Max
−30
1.5
40
⎯
⎯
1
1
Unit
Unit
mA
mV
mS
μA
μA
μA
Ω
V
V
V