2SA1312GRTE85LF Toshiba, 2SA1312GRTE85LF Datasheet - Page 2

• Manufacturer Part Number: 2SA1312GRTE85LF
• Description: Bipolar Small Signal PNP Audio Amp VCEO -120V HFE 700
• Manufacturer: Toshiba

Specifications of 2SA1312GRTE85LF

• Dc Collector/base Gain Hfe Min: 200
• Gain Bandwidth Product Ft: 100 MHz
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Package / Case: TO-236MOD
• Collector- Emitter Voltage Vceo Max: - 120 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 100 mA
• Power Dissipation: 150 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Note: h
( ) marking symbol
FE
Characteristics
classification GR (G): 200~400, BL (L): 350~700
(Ta = 25°C)
V
Symbol
NF (1)
NF (2)
CE (sat)
I
I
CBO
EBO
h
C
f
FE
T
ob
(Note)
V
V
V
I
V
V
V
Rg = 10 kΩ
V
Rg = 10 kΩ
C
CB
EB
CE
CE
CB
CE
CE
= −10 mA, I
= −120 V, I
= −5 V, I
= −6 V, I
= −6 V, I
= −10 V, I
= −6 V, I
= −6 V, I
2
Test Condition
C
C
C
C
C
B
E
= 0
= −2 mA
= −1 mA
= −0.1 mA, f = 100 Hz,
= −0.1 mA, f = 1 kHz,
E
= −1 mA
= 0, f = 1 MHz
= 0
200
Min
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
100
0.5
0.2
⎯
⎯
⎯
⎯
4
2007-11-01
2SA1312
−0.1
−0.1
−0.3
Max
700
⎯
⎯
6
3
MHz
Unit
μA
μA
pF
dB
V