HN7G08FE-A(TE85L,F Toshiba, HN7G08FE-A(TE85L,F Datasheet - Page 5

• Manufacturer Part Number: HN7G08FE-A(TE85L,F
• Description: Bipolar Small Signal Vceo=-12V Vceo=50V Ic=-400mA IC=100mA
• Manufacturer: Toshiba

Specifications of HN7G08FE-A(TE85L,F

• Dc Collector/base Gain Hfe Min: 300
• Gain Bandwidth Product Ft: 130 MHz
• Configuration: Dual
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Package / Case: 2-2J1E
• Collector- Emitter Voltage Vceo Max: - 12 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 400 mA
• Power Dissipation: 100 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

HN7G08FE
(Q1, Q2 common)
*
P
– Ta
C
200
150
100
50
0
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE Ta (°C)
*:Total rating
5
2005-03-23