ZXTD09N50DE6TA Diodes Inc, ZXTD09N50DE6TA Datasheet - Page 3

• Manufacturer Part Number: ZXTD09N50DE6TA
• Description: Bipolar Small Signal Dual 50V NPN
• Manufacturer: Diodes Inc

Specifications of ZXTD09N50DE6TA

• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Package / Case: SOT-23-6
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 1 A
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 0.9 W
• Maximum Operating Frequency: 215 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle
ISSUE 2 - JUNE 2001
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current
Collector Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer
Ratio
Transition
Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
SYMBOL
V
V
V
I
I
V
V
V
h
f
C
t
t
CBO
EBO
CES
T
(on)
(off)
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo
amb
MIN.
50
50
5
200
300
200
75
20
= 25°C unless otherwise stated).
3
TYP.
24
60
120
160
940
850
420
450
350
130
60
215
10
150
425
MAX.
10
10
10
35
80
200
270
1100
1100
2%
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
MHz
pF
ns
ns
ZXTD09N50DE6
CONDITIONS.
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
f= 100MHz
V
I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
V
B1
CB
EB
CES = 40V
CB
= 100 A
= 100 A
= 10mA*
= 100mA, I
= 250mA, I
= 500mA, I
= 1A, I
= 1A, I
= 1A, V
=10mA, V
= 100mA, V
= 500mA, V
= 1A, V
= 1.5A, V
= 50mA, V
CC
=I
= 4V
= 40V
= 10V, f=1MHz
=10 V, I
B2
=100mA
B
B
CE
CE
= 50mA*
= 50mA*
CE
= 2V*
= 2V*
CE
C
CE
B
B
B
=2 V*
= 1A
CE
CE
= 10mA*
= 10mA*
= 10mA*
= 2V*
=10V
=2 V*
=2V*
E6