HN7G05FU(TE85L,F) Toshiba, HN7G05FU(TE85L,F) Datasheet
HN7G05FU(TE85L,F)
Specifications of HN7G05FU(TE85L,F)
Related parts for HN7G05FU(TE85L,F)
HN7G05FU(TE85L,F) Summary of contents
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... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc) ...
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Q1 Transistor Electrical Characteristics ( ) Characteristic Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Input voltage (ON) Input voltage (OFF) Input resistor Resistor ratio Q2 Electrical Characteristics (MOSFET) Characteristic Gate leakage current Drain-source breakdown voltage ...
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Q1 (Transistor) 3 HN7G05FU 2007-11-01 ...
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Q2 (S-MOS) 4 HN7G05FU 2007-11-01 ...
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Q1, Q2 common * P – Ta 400 300 200 100 100 AMBIENT TEMPERATURE Ta (°C) *:Total rating 125 150 175 5 HN7G05FU 2007-11-01 ...
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... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...