BFS17NTA Diodes Inc, BFS17NTA Datasheet - Page 3

• Manufacturer Part Number: BFS17NTA
• Description: Bipolar Small Signal SINGLE NPN 3.2GHz 50A 330mW
• Manufacturer: Diodes Inc

Specifications of BFS17NTA

• Dc Collector/base Gain Hfe Min: 0.005 A
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Collector- Emitter Voltage Vceo Max: 11 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 50 A
• Maximum Dc Collector Current: 50 A
• Power Dissipation: 330 mW
• Maximum Operating Frequency: 3.2 GHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Static Forward Current Transfer Ratio (Note 5)
Collector-Emitter Saturation Voltage (Note 5)
Transition Frequency (Note 5)
Collector Output Capacitance (Note 5)
Notes:
Document Number DS32160 Rev. 2 - 2
BFS17N
5. Measured under pulsed conditions. Pulse width ≤ 300
Characteristic
@T
A
= 25°C unless otherwise specified
V
V
V
Symbol
V
(BR)CBO
(BR)CEO
(BR)EBO
µs. Duty cycle ≤ 2%
I
I
CE(sat)
h
C
CBO
EBO
f
FE
T
ob
www.diodes.com
3 of 6
Min
1.4
20
11
56
3
−
−
−
−
Typ
3.2
0.8
−
−
−
−
−
−
−
Max
180
0.5
0.5
0.5
1.5
Diodes Incorporated
−
−
−
−
A Product Line of
GHz
Unit
µA
µA
pF
V
V
V
−
V
I
I
I
V
V
I
I
I
f = 500MHz
V
C
C
E
C
C
E
CB
EB
CB
= 10µA
= 1mA
= 10µA
= 5mA, V
= 25mA, I
= 25mA, V
= 10V
= 10V, f = 1MHz
= 2V
Test Condition
CE
B
CE
= 5mA
= 10V
= 5V,
© Diodes Incorporated
BFS17N
August 2010