2SA1162GRT5LFT Toshiba, 2SA1162GRT5LFT Datasheet

2SA1162GRT5LFT

Manufacturer Part Number

2SA1162GRT5LFT

Description

Bipolar Small Signal Transistor

Manufacturer

Toshiba

Datasheet

1.2SA1162-YT5LFT.pdf (3 pages)

Specifications of 2SA1162GRT5LFT

Dc Collector/base Gain Hfe Min

200

Transistor Polarity

PNP

Mounting Style

SMD/SMT

Package / Case

S-Mini

Emitter- Base Voltage Vebo

- 5 V

Continuous Collector Current

- 150 mA

Power Dissipation

150 mW

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Audio Frequency General Purpose Amplifier Applications

• High voltage and high current:

• Excellent h

• High h

• Low noise: NF = 1dB (typ.), 10dB (max)

• Complementary to 2SC2712

• Small package

Absolute Maximum Ratings

Electrical Characteristics

Marking

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Collector power dissipation

Junction temperature

Storage temperature range

Note: Using continuously under heavy loads (e.g. the application of high

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

Noise figure

Note: h

FE:

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristics

classification O (O): 70~140, Y (Y): 120~240, GR (G): 200~400, ( ) marking symbol

linearity: h

= 70~400

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

= 0.95 (typ.)

= −0.1 mA)/h

(Ta = 25°C)

CEO

(Ta = 25°C)

Symbol

CE (sat)

CBO

EBO

= −50 V, I

CBO

CEO

EBO

stg

2SA1162

(Note)

Rg = 10 kΩ,

= −100 mA, I

−55~125

= −150 mA (max)

= −2 mA)

Rating

= −50 V, I

= −5 V, I

= −6 V, I

= −10 V, I

= −6 V, I

−150

−50

−30

150

125

−5

Test Condition

= 0

= −2 mA

= −0.1 mA, f = 1 kHz,

= 0

= 0, f = 1 MHz

= −1 mA

= −10 mA

Unit

°C

Weight: 0.012 g (typ.)

JEDEC

JEITA

TOSHIBA

Min

⎯

Typ.

−0.1

1.0

⎯

TO-236MOD

2-3F1A

SC-59

2007-11-01

−0.1

−0.3

2SA1162

Max

400

⎯

Unit: mm

MHz

Unit

μA

Related parts for 2SA1162GRT5LFT

2SA1162GRT5LFT Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 2

2 2SA1162 2007-11-01 ...

Page 3

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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