ZXTD6717E6TA Diodes Inc, ZXTD6717E6TA Datasheet - Page 3
![Bipolar Small Signal Comp Dual](/photos/15/66/156604/sot23-6_sml.jpg)
ZXTD6717E6TA
Manufacturer Part Number
ZXTD6717E6TA
Description
Bipolar Small Signal Comp Dual
Manufacturer
Diodes Inc
Datasheet
1.ZXTD6717E6TA.pdf
(7 pages)
Specifications of ZXTD6717E6TA
Minimum Operating Temperature
- 55 C
Configuration
Dual
Transistor Polarity
NPN/PNP
Mounting Style
SMD/SMT
Package / Case
SOT-23-6
Collector- Emitter Voltage Vceo Max
15 V at NPN, 12 V at PNP
Emitter- Base Voltage Vebo
- 5 V
Maximum Dc Collector Current
1.5 A at NPN, 1.25 A at PNP
Power Dissipation
1700 mW
Maximum Operating Frequency
180 MHz at NPN, 220 MHz at PNP
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ZXTD6717E6TA
Manufacturer:
ZETEX
Quantity:
3 000
Part Number:
ZXTD6717E6TA
Manufacturer:
DIODES/美台
Quantity:
20 000
NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle
ISSUE 2 - JULY 2001
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
SYMBOL
V
V
V
I
I
I
V
V
V
h
f
C
t
t
CBO
EBO
CES
T
(on)
(off)
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo
amb
= 25°C unless otherwise stated).
MIN.
15
15
5
200
300
250
200
75
30
3
TYP.
150
205
0.865
420
450
390
300
150
180
15
250
16.5
40
75
0.93
75
50
2%
MAX.
10
10
10
100
200
245
1.1
1.1
20
55
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
V
V
MHz
pF
ns
ns
ZXTD6717E6
CONDITIONS.
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
I
I
f=100MHz
V
I
I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
B1
CB
EB
CES
CB
=100 A
=10mA*
=100 A
=100mA, I
=250mA, I
=500mA, I
=1A, I
=1.5A, I
=1.5A, I
=1.5A, V
=10mA, V
=100mA, V
=500mA, V
=1A, V
=3A, V
=5A, V
=50mA, V
=1A, V
=I
=4V
=10V
=10V, f=1MHz
B2
=10V
=100mA
B
CE
CE
CE
CC
=10mA*
B
B
CE
=2V*
=2V*
=2V*
=20mA*
=20mA*
=10V
CE
CE
B
B
B
=2V*
CE
CE
=10mA*
=10mA*
=10mA*
=2V*
=10V
=2V*
=2V*