DXT2012P5-13 Diodes Inc, DXT2012P5-13 Datasheet - Page 4

• Manufacturer Part Number: DXT2012P5-13
• Description: Bipolar Power BIPOLAR TRANS,PNP 60V,-5.5A
• Manufacturer: Diodes Inc

Specifications of DXT2012P5-13

• Continuous Collector Current: - 5.5 A
• Dc Collector/base Gain Hfe Min: 10
• Maximum Operating Frequency: 120 MHz
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Package / Case: PowerDI-5
• Collector- Emitter Voltage Vceo Max: - 60 V
• Emitter- Base Voltage Vebo: - 7 V
• Maximum Dc Collector Current: - 15 A
• Power Dissipation: 0.74 W
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 7)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage (Note 7)
Base-Emitter Saturation Voltage (Note 7)
Base-Emitter Turn-On Voltage (Note 7)
DC Current Gain (Note 7)
Transition Frequency
Output Capacitance
Switching Times
Notes:
DXT2012P5
Document number: DS32070 Rev. 2 - 2
PowerDI is a registered trademark of Diodes
7. Pulse Test: Pulse width ≤300μs. Duty cycle ≤2.0%.
Characteristic
@T
A
= 25°C unless otherwise specified
V
V
V
Symbol
V
V
R≤1kΩ
V
(BR)CBO
(BR)CEO
(BR)EBO
I
C
I
I
CE(sat)
BE(sat)
BE(on)
h
www.diodes.com
CBO
CER
EBO
t
t
f
obo
on
off
FE
T
4 of 7
-100
Min
100
100
-60
45
10
-7
−
−
−
−
−
−
−
−
−
−
−
−
−
-1030
-120
-195
-920
Typ
-8.1
250
200
120
370
-80
-15
-55
-90
<1
<1
<1
90
25
48
39
−
−
-1150
-1020
-120
-250
Max
-0.5
-0.5
300
-20
-20
-10
-25
-70
−
−
−
−
−
−
−
−
−
−
Diodes Incorporated
A Product Line of
Unit
MHz
mV
mV
mV
nA
μA
nA
μA
nA
pF
ns
V
V
V
−
I
I
I
V
V
V
V
V
I
I
I
I
I
V
V
V
V
V
V
f = 50MHz
V
V
I
C
C
E
C
C
C
C
C
B1
CB
CB
CB
CB
EB
CE
CE
CE
CE
CE
CE
CB
CC
= -100μA
= -0.1A, I
= -1A, I
= -5A, I
= -100μA
= -10mA
= -2A, I
= -5A, I
= I
= -10V, I
= -80V
= -80V, T
= -80V
= -80V, T
= -6V
= -1V, I
= -1V, I
= -1V, I
= -1V, I
= -1V, I
= -10V, f = 1MHz
= 10V, I
B2
= -100mA
B
B
B
B
Test Condition
= -100mA
= -500mA
B
= -200mA
= -500mA
C
C
C
C
C
C
C
= -10mA
= -10mA
= -2A
= -5A
= -5A
= -10A
amb
amb
= 1A,
DXT2012P5
= -100mA,
= 100 °C
= 100 °C
© Diodes Incorporated
March 2010