FZT560TA Diodes Inc, FZT560TA Datasheet
FZT560TA
Manufacturer Part Number
FZT560TA
Description
Bipolar Power PNP High V 500V
Manufacturer
Diodes Inc
Datasheet
1.FZT560TC.pdf
(2 pages)
Specifications of FZT560TA
Continuous Collector Current
- 0.15 A
Maximum Operating Frequency
60 MHz
Minimum Operating Temperature
- 55 C
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Package / Case
SOT-223
Collector- Emitter Voltage Vceo Max
500 V
Emitter- Base Voltage Vebo
- 5 V
Maximum Dc Collector Current
0.15 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FZT560TA
Manufacturer:
Diodes/Zetex
Quantity:
42 131
SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 1– NOVEMBER 1998
FEATURES
*
*
*
PARTMARKING DETAIL –
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
* Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter Saturation
Voltage
Base-Emitter Turn On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Output Capacitance
Switching times
500 Volt V
150mA continuous current
P
tot
= 2 Watt
CEO
amb
=25°C
FZT560
V
SYMBOL
V
V
V
I
I
I
V
V
h
f
C
t
t
CBO
CES
EBO
T
on
off
FE
(BR)CBO
CEO(SUS)
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo
amb
MIN.
-500
-500
-5
100
80
15 typ
60
110 typ.
1.5 typ
SYMBOL
V
V
V
I
I
P
T
CM
C
tot
j
CBO
CEO
EBO
:T
= 25°C unless otherwise stated).
stg
MAX.
-100
-100
-100
-0.20
-0.5
-0.9
-0.9
300
300
8
UNIT
V
V
V
nA
nA
nA
V
V
V
V
MHz
pF
ns
-55 to +150
s
VALUE
-500
-500
-500
-150
CONDITIONS.
I
I
I
V
V
V
I
I
I
I
I
I
I
I
f=50MHz
V
V
I
-5
2
C
C
E
C
C
C
C
C
C
C
C
B1
C
CB
CE
EB
CB
CE
=-100 A
=-100 A
=-10mA*
=-20mA, I
=-50mA, I
=-50mA, I
=-1mA, V
=-50mA, V
=-100mA, V
=-10mA, V
=-50mA, V
=-5mA,I
FZT560
=-500V
=-5V
=-100, I
=-500V
=-20, f=1MHz
B2
C
CE
B
B
B
=-50mA,
CE
CE
=10mA,
B
CE
=-2mA
=-10mA*
=-10mA*
=-10V
CE
=-10V*
=-20V
=-10V*
UNIT
mA
mA
=-10V*
°C
W
V
V
V
C
E
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FZT560TA Summary of contents
Page 1
SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 1– NOVEMBER 1998 FEATURES * 500 Volt V CEO * 150mA continuous current * Watt tot PARTMARKING DETAIL – ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage ...
Page 2
FZT560 TYPICAL CHARACTERISTICS +25°C 1.6 1.2 IC/IB=10 IC/IB=20 0.8 IC/IB=50 0 10m I - Collector Current ( CE(sat) C VCE=5V 240 +100°C 160 +25°C 80 -55° 10m 100m I - Collector Current ...