DXT2013P5-13 Diodes Inc, DXT2013P5-13 Datasheet - Page 4

• Manufacturer Part Number: DXT2013P5-13
• Description: Bipolar Power BIPOLAR TRANS,PNP -100V,-5A
• Manufacturer: Diodes Inc

Specifications of DXT2013P5-13

• Continuous Collector Current: - 5 A
• Dc Collector/base Gain Hfe Min: 15
• Maximum Operating Frequency: 125 MHz
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Package / Case: PowerDI-5
• Collector- Emitter Voltage Vceo Max: - 100 V
• Emitter- Base Voltage Vebo: - 7 V
• Maximum Dc Collector Current: - 10 A
• Power Dissipation: 0.74 W
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 7)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage (Note 7)
Base-Emitter Saturation Voltage (Note 7)
Base-Emitter Turn-On Voltage (Note 7)
DC Current Gain (Note 7)
Transition Frequency
Output Capacitance
Switching Times
PowerDI is a registered trademark of Diodes Incorporated.
Notes:
DXT2013P5
Document number: DS32010 Rev. 2 - 2
7. Pulse Test: Pulse width ≤300μs. Duty cycle ≤2.0%.
Characteristic
@T
A
= 25°C unless otherwise specified
V
V
V
Symbol
V
V
R≤1kΩ
V
(BR)CBO
(BR)CEO
(BR)EBO
I
C
I
I
CE(sat)
BE(sat)
BE(on)
h
www.diodes.com
CBO
CER
EBO
t
t
f
obo
on
off
FE
T
4 of 7
-140
-100
Min
-7.0
100
100
25
15
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-160
-115
-120
-240
-985
-920
Typ
-8.1
250
200
125
540
-20
-70
<1
<1
<1
⎯
⎯
50
30
42
42
5
-1100
-1050
-150
-340
Max
-0.5
-0.5
300
-20
-20
-10
-30
-90
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Diodes Incorporated
A Product Line of
Unit
MHz
mV
mV
mV
nA
μA
nA
μA
nA
pF
⎯
ns
ns
V
V
V
I
I
I
V
V
V
V
V
I
I
I
I
I
V
I
I
I
I
I
I
f = 50MHz
V
I
I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
B1
CB
CB
CB
CB
EB
CE
CB
= -100μA
= -0.1A, I
= -1A, I
= -4A, I
= -10mA, V
= -1A, V
= -100μA
= -10mA
= -2A, I
= -4A, I
= -3A, V
= -4A, V
= -10A, V
= -100mA, V
= -1A, V
= I
= -100V
= -100V, T
= -100V
= -100V, T
= -6V
= -4V, I
= -10V, f = 1MHz
B2
= -100mA
B
B
B
B
Test Condition
CE
CE
CE
CC
= -100mA
= -400mA
B
= -200mA
= -400mA
C
CE
= -10mA
= -1V
= -2A
CE
= -1V
= -1V
= -10V,
DXT2013P5
= -1V
amb
amb
CE
= -1V
= -10V,
= 100 °C
= 100 °C
© Diodes Incorporated
March 2010